Datasheet > AM29F200BT-120

AM29F200BT-120

更新时间： 2024-09-05 22:07:07

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
39页	486K
描述
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

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AM29F200BT-120 数据手册

Am29F200B

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10% for read and write operations

■ Embedded Algorithms

— Minimizes system level power requirements

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F200A device

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ High performance

— Access times as fast as 45 ns

■ Minimum 1,000,000 write/erase cycles guaranteed

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package options

■ Low power consumption

— 20 mA typical active read current (byte mode)

— 28 mA typical active read current for

(word mode)

— 44-pin SO

— 30 mA typical program/erase current

— 48-pin TSOP

— 1 µA typical standby current

— Known Good Die (KGD)

(see publication number 21257)

■ Sector erase architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

three 64 Kbyte sectors (byte mode)

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash

— One 8 Kword, two 4 Kword, one 16 Kword, and

three 32 Kword sectors (word mode)

— Superior inadvertent write protection

— Supports full chip erase

■ Data# Polling and Toggle Bit

— Sector Protection features:

— Detects program or erase cycle completion

■ Ready/Busy# output (RY/BY#)

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

— Hardware method for detection of program or

erase cycle completion

Sectors can be locked via programming equipment

■ Erase Suspend/Erase Resume

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

— Supports reading data from a sector not

being erased

■ Top or bottom boot block configurations available

■ Hardware RESET# pin

— Resets internal state machine to the reading

array data

Publication# 21526 Rev: B Amendment/+2

Issue Date: July 2, 1999

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

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与AM29F200BT-120相关器件

型号	品牌	获取价格	描述	数据表
AM29F200BT-120DG1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200BT-120DGC1	SPANSION	获取价格	Flash, 128KX16, 120ns, DIE-42
AM29F200BT-120DGC1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200BT-120DGD1	SPANSION	获取价格	Flash, 128KX16, 120ns, DIE-42
AM29F200BT-120DGE1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200BT-120DGE1	SPANSION	获取价格	Flash, 128KX16, 120ns, DIE-42
AM29F200BT-120DGF1	SPANSION	获取价格	Flash, 128KX16, 120ns, DIE-42
AM29F200BT-120DGH1	SPANSION	获取价格	Flash, 256KX8, 120ns
AM29F200BT-120DGI1	SPANSION	获取价格	Flash, 128KX16, 120ns, DIE-42
AM29F200BT-120DGI1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev

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