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AM29F100T-120DWI1 PDF预览

AM29F100T-120DWI1

更新时间： 2024-09-19 22:29:59
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
8页 59K
描述
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1

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中文翻译

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AM29F100T-120DWI1 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.83最长访问时间：120 ns
其他特性：MIN 100K PROGRAM/ERASE CYCLE; CAN BE CONFG AS 64K X 16; TOP BOOT BLOCK启动块：TOP
JESD-30 代码：X-XUUC-N47内存密度：1048576 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1端子数量：47
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128KX8
输出特性：3-STATE封装主体材料：UNSPECIFIED
封装代码：DIE封装形状：UNSPECIFIED
封装形式：UNCASED CHIP并行/串行：PARALLEL
编程电压：5 V认证状态：Not Qualified
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：NO LEAD端子位置：UPPER
类型：NOR TYPEBase Number Matches：1

AM29F100T-120DWI1 数据手册

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SUPPLEMENT  
Am29F100 Known Good Die  
1 Megabit (128 K x 8-Bit/64 K x 16-Bit)  
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1  
DISTINCTIVE CHARACTERISTICS  
■ Single power supply operation  
■ Embedded Algorithms  
— 5.0 V ± 10% for read, erase, and program  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
operations  
— Simplifies system-level power requirements  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
■ High performance  
— 120 ns maximum access time  
■ Minimum 100,000 program/erase cycles  
■ Low power consumption  
guaranteed  
— 20 mA typical active read current for byte mode  
— 28 mA typical active read current for word mode  
— 30 mA typical program/erase current  
— 25 µA typical standby current  
■ Compatible with JEDEC standards  
— Pinout and software compatible with  
single-power-supply flash  
— Superior inadvertent write protection  
■ Flexible sector architecture  
■ Data Polling and Toggle Bits  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
one 64 Kbyte sectors (byte mode)  
— Provides a software method of detecting  
program or erase cycle completion  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
one 32 Kword sectors (word mode)  
■ Ready/Busy pin (RY/BY#)  
— Provides a hardware method for detecting  
program or erase cycle completion  
— Any combination of sectors can be erased  
— Supports full chip erase  
■ Erase Suspend/Erase Resume  
■ Top or bottom boot block configurations  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
available  
■ Sector protection  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
■ Hardware RESET# pin  
— Hardware method of resetting the device to  
reading array data  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
■ Tested to datasheet specifications at  
temperature  
— Temporary Sector Unprotect feature allows in-  
system code changes in protected sectors  
■ Quality and reliability levels equivalent to  
standard packaged components  
Publication# 21235 Rev: B Amendment/0  
Issue Date: January 1998  
12345678

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 		1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120FCB AMD

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 		1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120FE AMD

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 		1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120FEB AMD

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 		1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

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