Datasheet > AM29F100T-120EEB

AM29F100T-120EEB

更新时间： 2024-11-09 22:34:07

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
36页	423K
描述
1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

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AM29F100T-120EEB 数据手册

FINAL

Am29F100

1 Megabit (128 K x 8-bit/64 K x 16-bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 5.0 V ± 10% for read, erase, and program

— Embedded Erase algorithm automatically

pre-programs and erases the chip or any

combination of designated sector

operations

— Simplifies system-level power requirements

— Embedded Program algorithm automatically

programs and verifies data at specified address

■ High performance

— 70 ns maximum access time

■ Minimum 100,000 program/erase cycles

■ Low power consumption

guaranteed

— 20 mA typical active read current for byte mode

— 28 mA typical active read current for word mode

— 30 mA typical program/erase current

— 25 µA typical standby current

■ Package options

— 44-pin SO

— 48-pin TSOP

■ Compatible with JEDEC standards

■ Flexible sector architecture

— Pinout and software compatible with

single-power-supply flash

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

one 64 Kbyte sectors (byte mode)

— Superior inadvertent write protection

— One 8 Kword, two 4 Kword, one 16 Kword, and

one 32 Kword sectors (word mode)

■ Data# Polling and Toggle Bits

— Provides a software method of detecting

program or erase cycle completion

— Any combination of sectors can be erased

— Supports full chip erase

■ Ready/Busy pin (RY/BY#)

■ Top or bottom boot block configurations

— Provides a hardware method for detecting

program or erase cycle completion

available

■ Sector protection

■ Erase Suspend/Erase Resume

— Hardware-based feature that disables/re-

enables program and erase operations in any

combination of sectors

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

— Sector protection/unprotection can be

implemented using standard PROM

programming equipment

■ Hardware RESET# pin

— Hardware method of resetting the device to

reading array data

— Temporary Sector Unprotect feature allows in-

system code changes in protected sectors

Publication# 18926 Rev: C Amendment/+2

Issue Date: March 1998

12 3 4 5 6 7...36

中文翻译

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与AM29F100T-120EEB相关器件

型号	品牌	获取价格	描述	数据表
AM29F100T-120EI	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120EIB	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120FC	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120FCB	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120FE	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120FEB	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120FI	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120FIB	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120SC	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
AM29F100T-120SCB	AMD	获取价格	1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

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