Datasheet > AM29F080B-120FE

AM29F080B-120FE

更新时间： 2024-09-18 23:29:35

品牌	Logo	应用领域
其他 - ETC		闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
38页	838K
描述
x8 Flash EEPROM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AM29F080B-120FE 数据手册

Am29F080B

8 Megabit (1 M x 8-Bit)

CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10%, single power supply operation

■ Minimum 1,000,000 program/erase cycles per

sector guaranteed

— Minimizes system level power requirements

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package options

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F080 device

■ High performance

— 40-pin TSOP

— Access times as fast as 55 ns

— 44-pin SO

■ Low power consumption

■ Compatible with JEDEC standards

— 25 mA typical active read current

— 30 mA typical program/erase current

— Pinout and software compatible with

single-power-supply Flash standard

— 1 µA typical standby current (standard access

— Superior inadvertent write protection

■ Data# Polling and toggle bits

time to active mode)

■ Flexible sector architecture

— 16 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased.

— Supports full chip erase

— Provides a software method of detecting program

or erase cycle completion

■ Ready/Busy# output (RY/BY#)

— Provides a hardware method for detecting

— Group sector protection:

program or erase cycle completion

A hardware method of locking sector groups to

prevent any program or erase operations within

that sector group

■ Erase Suspend/Erase Resume

— Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector,

then resumes the erase operation

Temporary Sector Group Unprotect allows code

changes in previously locked sectors

■ Hardware reset pin (RESET#)

■ Embedded Algorithms

— Resets internal state machine to the read mode

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Command sequence optimized for mass storage

— Specific addresses not required for unlock cycles

— Embedded Program algorithm automatically

writes and verifies bytes at specified addresses

Publication# 21503 Rev: G Amendment/+1

Issue Date: January 3, 2002

12 3 4 5 6 7...38

中文翻译

下载PDF

与AM29F080B-120FE相关器件

型号	品牌	获取价格	描述	数据表
AM29F080B-120FEB	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO40, REVERSE, TSOP-40
AM29F080B-120FI	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120FIB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120FIB	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO40, REVERSE, TSOP-40
AM29F080B-120FKB	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO40, REVERSE, TSOP-40
AM29F080B-120SC	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SCB	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO44, SOP-44
AM29F080B-120SCB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SD	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SDB	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO44, SOP-44

与AM29F080B-120FE相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

29
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

28
SL74HC10N：高性能三输入与非门解析
2024-09-03

100
AIC1781A 电池充电控制器深度解析
2024-09-03

94

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F080B-120FE

AM29F080B-120FE 数据手册

与AM29F080B-120FE相关器件

与AM29F080B-120FE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F080B-120FE

AM29F080B-120FE 数据手册

与AM29F080B-120FE相关器件

与AM29F080B-120FE相关文章

您还可以找

您在本页遇到什么问题？