Datasheet > AM29F080B-120FI

AM29F080B-120FI

更新时间： 2024-11-22 22:23:43

品牌	Logo	应用领域
超微 - AMD		/
页数	文件大小	规格书
37页	426K
描述
8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AM29F080B-120FI 数据手册

PRELIMINARY

Am29F080B

8 Megabit (1 M x 8-Bit)

CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10%, single power supply operation

■ Minimum 1,000,000 program/erase cycles per

sector guaranteed

■ Package options

— 40-pin TSOP

— Minimizes system level power requirements

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29F080 device

— 44-pin SO

■ High performance

■ Compatible with JEDEC standards

— Access times as fast as 70 ns

— Pinout and software compatible with

single-power-supply Flash standard

■ Low power consumption

— 25 mA typical active read current

— 30 mA typical program/erase current

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— 1 µA typical standby current (standard access

time to active mode)

— Provides a software method of detecting

program or erase cycle completion

■ Flexible sector architecture

— 16 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased.

— Supports full chip erase

■ Ready/Busy# output (RY/BY#)

— Provides a hardware method for detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Group sector protection:

— Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector,

then resumes the erase operation

A hardware method of locking sector groups to

prevent any program or erase operations within

that sector group

■ Hardware reset pin (RESET#)

Temporary Sector Group Unprotect allows code

changes in previously locked sectors

— Resets internal state machine to the read mode

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies bytes at specified addresses

Publication# 21503 Rev: C Amendment/+1

Issue Date: April 1998

12 3 4 5 6 7...37

中文翻译

下载PDF

与AM29F080B-120FI相关器件

型号	品牌	获取价格	描述	数据表
AM29F080B-120FIB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120FIB	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO40, REVERSE, TSOP-40
AM29F080B-120FKB	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO40, REVERSE, TSOP-40
AM29F080B-120SC	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SCB	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO44, SOP-44
AM29F080B-120SCB	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SD	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SDB	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO44, SOP-44
AM29F080B-120SE	AMD	获取价格	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SEB	SPANSION	获取价格	Flash, 1MX8, 120ns, PDSO44, SOP-44

与AM29F080B-120FI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F080B-120FI

AM29F080B-120FI 数据手册

与AM29F080B-120FI相关器件

与AM29F080B-120FI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F080B-120FI

AM29F080B-120FI 数据手册

与AM29F080B-120FI相关器件

与AM29F080B-120FI相关文章

您还可以找

您在本页遇到什么问题？