Datasheet > AM29F040-120PE

AM29F040-120PE

更新时间： 2024-11-03 23:00:31

品牌	Logo	应用领域
超微 - AMD		闪存内存集成电路光电二极管
页数	文件大小	规格书
33页	418K
描述
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AM29F040-120PE 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DIP	包装说明：	PLASTIC, DIP-32
针数：	32	Reach Compliance Code：	unknown
ECCN代码：	3A001.A.2.C	HTS代码：	8542.32.00.51
风险等级：	5.74	Is Samacsys：	N
最长访问时间：	120 ns	其他特性：	100K WRITE/ERASE CYCLES MIN
命令用户界面：	YES	数据轮询：	YES
耐久性：	100000 Write/Erase Cycles	JESD-30 代码：	R-PDIP-T32
JESD-609代码：	e0	长度：	42.164 mm
内存密度：	4194304 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
部门数/规模：	8	端子数量：	32
字数：	524288 words	字数代码：	512000
工作模式：	ASYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-55 °C	组织：	512KX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装等效代码：	DIP32,.6
封装形状：	RECTANGULAR	封装形式：	IN-LINE
并行/串行：	PARALLEL	电源：	5 V
编程电压：	5 V	认证状态：	Not Qualified
座面最大高度：	5.715 mm	部门规模：	64K
最大待机电流：	0.00002 A	子类别：	Flash Memories
最大压摆率：	0.04 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	NO	技术：	CMOS
温度等级：	MILITARY	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	切换位：	YES
类型：	NOR TYPE	宽度：	15.24 mm
Base Number Matches：	1

AM29F040-120PE 数据手册

FINAL

Am29F040

4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only,

Sector Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10% for read and write operations

— Minimizes system level power requirements

■ Compatible with JEDEC-standards

■ Embedded Erase Algorithms

— Automatically preprograms and erases the chip

or any combination of sectors

■ Embedded Program Algorithms

— Pinout and software compatible with single-

power-supply Flash

— Automatically programs and veriﬁes data at

speciﬁed address

— Superior inadvertent write protection

■ Package options

■ Data Polling andToggle Bit feature for detection

of program or erase cycle completion

— 32-pin PLCC

■ Erase suspend/resume

— 32-pin TSOP

— Supports reading data from a sector not being

erased

— 32-pin PDIP

■ Minimum 100,000 write/erase cycles guaranteed

■ High performance

■ Low power consumption

— 20 mA typical active read current

— 30 mA typical program/erase current

— 55 ns maximum access time

■ Sector erase architecture

— Uniform sectors of 64 Kbytes each

■ Enhanced power management for standby

mode

— Any combination of sectors can be erased.

Also supports full chip erase.

— <1 µA typical standby current

— Standard access time from standby mode

■ Sector protection

— Hardware method that disables any combination

of sectors from write or erase operations

GENERAL DESCRIPTION

The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory

organized as 512 Kbytes of 8 bits each. The Am29F040

is offered in a 32-pin package. This device is designed

to be programmed in-system with the standard system

which controls the erase and programming circuitry.

Write cycles also internally latch addresses and data

needed for the programming and erase operations.

Reading data out of the device is similar to reading

from 12.0 Volt Flash or EPROM devices.

5.0 V V

supply. A 12.0 V V

is not required for

write or erase operations. The device can also be

reprogrammed in standard EPROM programmers.

The Am29F040 is programmed by executing the pro-

gram command sequence. This will invoke the Embed-

ded Program Algorithm which is an internal algorithm

that automatically times the program pulse widths and

veriﬁes proper cell margin. Typically, each sector can

be programmed and veriﬁed in less than one second.

Erase is accomplished by executing the erase com-

mand sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automati-

cally preprograms the array if it is not already pro-

grammed before executing the erase operation. During

erase, the device automatically times the erase pulse

widths and veriﬁes proper cell margin.

The standard Am29F040 offers access times between

55 ns and 150 ns, allowing operation of high-speed

microprocessors without wait states. To eliminate bus

contention the device has separate chip enable (CE),

write enable (WE) and output enable (OE) controls.

The Am29F040 is entirely command set compatible

with the JEDEC single-power-supply Flash standard.

Commands are written to the command register using

standard microprocessor write timings. Register con-

tents serve as input to an internal state machine

Publication# 17113 Rev: E Amendment/0

Issue Date: November 1996

12 3 4 5 6 7...33

中文翻译

下载PDF

与AM29F040-120PE相关器件

型号	品牌	获取价格	描述	数据表
AM29F040-120PEB	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120PI	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120PIB	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-150DE	ETC	获取价格	x8 Flash EEPROM
AM29F040-150DEB	ETC	获取价格	x8 Flash EEPROM
AM29F040-150EC	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-150ECB	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-150EE	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-150EEB	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-150EI	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

与AM29F040-120PE相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

12
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

6
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

30
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

29

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F040-120PE

AM29F040-120PE 技术参数

AM29F040-120PE 数据手册

与AM29F040-120PE相关器件

与AM29F040-120PE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F040-120PE

AM29F040-120PE 技术参数

AM29F040-120PE 数据手册

与AM29F040-120PE相关器件

与AM29F040-120PE相关文章

您还可以找

您在本页遇到什么问题？