Datasheet > AM29F040-150PE

AM29F040-150PE

更新时间： 2024-11-23 05:26:31

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
33页	418K
描述
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

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AM29F040-150PE 数据手册

FINAL

Am29F040

4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only,

Sector Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10% for read and write operations

— Minimizes system level power requirements

■ Compatible with JEDEC-standards

■ Embedded Erase Algorithms

— Automatically preprograms and erases the chip

or any combination of sectors

■ Embedded Program Algorithms

— Pinout and software compatible with single-

power-supply Flash

— Automatically programs and veriﬁes data at

speciﬁed address

— Superior inadvertent write protection

■ Package options

■ Data Polling andToggle Bit feature for detection

of program or erase cycle completion

— 32-pin PLCC

■ Erase suspend/resume

— 32-pin TSOP

— Supports reading data from a sector not being

erased

— 32-pin PDIP

■ Minimum 100,000 write/erase cycles guaranteed

■ High performance

■ Low power consumption

— 20 mA typical active read current

— 30 mA typical program/erase current

— 55 ns maximum access time

■ Sector erase architecture

— Uniform sectors of 64 Kbytes each

■ Enhanced power management for standby

mode

— Any combination of sectors can be erased.

Also supports full chip erase.

— <1 µA typical standby current

— Standard access time from standby mode

■ Sector protection

— Hardware method that disables any combination

of sectors from write or erase operations

GENERAL DESCRIPTION

The Am29F040 is a 4 Mbit, 5.0 Volt-only Flash memory

organized as 512 Kbytes of 8 bits each. The Am29F040

is offered in a 32-pin package. This device is designed

to be programmed in-system with the standard system

which controls the erase and programming circuitry.

Write cycles also internally latch addresses and data

needed for the programming and erase operations.

Reading data out of the device is similar to reading

from 12.0 Volt Flash or EPROM devices.

5.0 V V

supply. A 12.0 V V

is not required for

write or erase operations. The device can also be

reprogrammed in standard EPROM programmers.

The Am29F040 is programmed by executing the pro-

gram command sequence. This will invoke the Embed-

ded Program Algorithm which is an internal algorithm

that automatically times the program pulse widths and

veriﬁes proper cell margin. Typically, each sector can

be programmed and veriﬁed in less than one second.

Erase is accomplished by executing the erase com-

mand sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automati-

cally preprograms the array if it is not already pro-

grammed before executing the erase operation. During

erase, the device automatically times the erase pulse

widths and veriﬁes proper cell margin.

The standard Am29F040 offers access times between

55 ns and 150 ns, allowing operation of high-speed

microprocessors without wait states. To eliminate bus

contention the device has separate chip enable (CE),

write enable (WE) and output enable (OE) controls.

The Am29F040 is entirely command set compatible

with the JEDEC single-power-supply Flash standard.

Commands are written to the command register using

standard microprocessor write timings. Register con-

tents serve as input to an internal state machine

Publication# 17113 Rev: E Amendment/0

Issue Date: November 1996

12 3 4 5 6 7...33

中文翻译

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AM29F040-150PE 替代型号

型号	品牌	替代类型	描述	数据表
AM29F040-150PEB	AMD	功能相似	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-150PCB	AMD	功能相似	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

与AM29F040-150PE相关器件

型号	品牌	获取价格	描述	数据表
AM29F040-150PEB	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-150PI	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-150PIB	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EC	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55ECB	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EE	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EEB	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EI	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55EIB	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-55FC	AMD	获取价格	4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

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