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AM29F010-70PC PDF预览

AM29F010-70PC

更新时间: 2024-09-19 23:04:19
品牌 Logo 应用领域
超微 - AMD 内存集成电路光电二极管
页数 文件大小 规格书
31页 349K
描述
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

AM29F010-70PC 数据手册

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FINAL  
Am29F010  
1 Megabit (128 K x 8-bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— 5.0 V ± 10% for read, erase, and program  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
operations  
— Simplifies system-level power requirements  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
High performance  
— 45 ns maximum access time  
Minimum 100,000 program/erase cycles  
Low power consumption  
guaranteed  
— 30 mA max active read current  
— 50 mA max program/erase current  
— <25 µA typical standby current  
Package options  
— 32-pin PLCC  
— 32-pin TSOP  
— 32-pin PDIP  
Flexible sector architecture  
— Eight uniform sectors  
Compatible with JEDEC standards  
— Any combination of sectors can be erased  
— Supports full chip erase  
— Pinout and software compatible with  
single-power-supply flash  
Sector protection  
— Superior inadvertent write protection  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
Data# Polling and Toggle Bits  
— Provides a software method of detecting  
program or erase cycle completion  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
Publication# 16736 Rev: G Amendment/+2  
Issue Date: March 1998  

AM29F010-70PC 替代型号

型号 品牌 替代类型 描述 数据表
SST39SF010A-70-4C-PHE MICROCHIP

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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
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