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AM29F010-90DWI1 PDF预览

AM29F010-90DWI1

更新时间: 2024-10-31 22:29:59
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
8页 59K
描述
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1

AM29F010-90DWI1 数据手册

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SUPPLEMENT  
Am29F010 Known Good Die  
1 Megabit (128 K x 8-Bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1  
Embedded Algorithms  
DISTINCTIVE CHARACTERISTICS  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
Single power supply operation  
— 5.0 V ± 10% for read, erase, and program  
operations  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
— Simplifies system-level power requirements  
High performance  
Minimum 100,000 program/erase cycles  
— 90 or 120 ns maximum access time  
guaranteed  
Low power consumption  
Compatible with JEDEC standards  
— 30 mA max active read current  
— 50 mA max program/erase current  
— <25 µA typical standby current  
— Pinout and software compatible with  
single-power-supply flash  
— Superior inadvertent write protection  
Flexible sector architecture  
— Eight uniform sectors  
Data Polling and Toggle Bits  
— Provides a software method of detecting  
program or erase cycle completion  
— Any combination of sectors can be erased  
— Supports full chip erase  
Tested to datasheet specifications at  
temperature  
Sector protection  
Quality and reliability levels equivalent to  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
standard packaged components  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
1/13/98  
Publication# 21116 Rev: B Amendment/0  
Issue Date: January 1998  

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