5秒后页面跳转
AM29F010-90DWC1 PDF预览

AM29F010-90DWC1

更新时间: 2024-10-31 23:04:19
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
8页 59K
描述
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1

AM29F010-90DWC1 技术参数

生命周期:Obsolete包装说明:DIE,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.83
最长访问时间:90 ns其他特性:MINIMUM 100K PROGRAM/ERASE CYCLE; 20 YEAR DATA RETENTION
数据保留时间-最小值:20JESD-30 代码:X-XUUC-N30
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:30字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:UPPER类型:NOR TYPE

AM29F010-90DWC1 数据手册

 浏览型号AM29F010-90DWC1的Datasheet PDF文件第2页浏览型号AM29F010-90DWC1的Datasheet PDF文件第3页浏览型号AM29F010-90DWC1的Datasheet PDF文件第4页浏览型号AM29F010-90DWC1的Datasheet PDF文件第5页浏览型号AM29F010-90DWC1的Datasheet PDF文件第6页浏览型号AM29F010-90DWC1的Datasheet PDF文件第7页 
SUPPLEMENT  
Am29F010 Known Good Die  
1 Megabit (128 K x 8-Bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1  
Embedded Algorithms  
DISTINCTIVE CHARACTERISTICS  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
Single power supply operation  
— 5.0 V ± 10% for read, erase, and program  
operations  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
— Simplifies system-level power requirements  
High performance  
Minimum 100,000 program/erase cycles  
— 90 or 120 ns maximum access time  
guaranteed  
Low power consumption  
Compatible with JEDEC standards  
— 30 mA max active read current  
— 50 mA max program/erase current  
— <25 µA typical standby current  
— Pinout and software compatible with  
single-power-supply flash  
— Superior inadvertent write protection  
Flexible sector architecture  
— Eight uniform sectors  
Data Polling and Toggle Bits  
— Provides a software method of detecting  
program or erase cycle completion  
— Any combination of sectors can be erased  
— Supports full chip erase  
Tested to datasheet specifications at  
temperature  
Sector protection  
Quality and reliability levels equivalent to  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
standard packaged components  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
1/13/98  
Publication# 21116 Rev: B Amendment/0  
Issue Date: January 1998  

与AM29F010-90DWC1相关器件

型号 品牌 获取价格 描述 数据表
AM29F010-90DWE1 AMD

获取价格

1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
AM29F010-90DWI1 AMD

获取价格

1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1
AM29F010-90EC AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-90ECB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-90EE AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-90EEB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-90EI AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-90EIB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-90FC AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-90FCB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory