5秒后页面跳转
AM29F010-70FEB PDF预览

AM29F010-70FEB

更新时间: 2024-11-08 20:13:07
品牌 Logo 应用领域
飞索 - SPANSION 光电二极管内存集成电路
页数 文件大小 规格书
31页 358K
描述
Flash, 128KX8, 70ns, PDSO32

AM29F010-70FEB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.84
最长访问时间:70 ns命令用户界面:YES
数据轮询:YES耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:3
部门数/规模:8端子数量:32
字数:131072 words字数代码:128000
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:5 V
反向引出线:YES部门规模:16K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.05 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPEBase Number Matches:1

AM29F010-70FEB 数据手册

 浏览型号AM29F010-70FEB的Datasheet PDF文件第2页浏览型号AM29F010-70FEB的Datasheet PDF文件第3页浏览型号AM29F010-70FEB的Datasheet PDF文件第4页浏览型号AM29F010-70FEB的Datasheet PDF文件第5页浏览型号AM29F010-70FEB的Datasheet PDF文件第6页浏览型号AM29F010-70FEB的Datasheet PDF文件第7页 
FINAL  
Am29F010  
1 Megabit (128 K x 8-bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— 5.0 V ± 10% for read, erase, and program  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
operations  
— Simplifies system-level power requirements  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
High performance  
— 45 ns maximum access time  
Minimum 100,000 program/erase cycles  
Low power consumption  
guaranteed  
— 30 mA max active read current  
— 50 mA max program/erase current  
— <25 µA typical standby current  
Package options  
— 32-pin PLCC  
— 32-pin TSOP  
— 32-pin PDIP  
Flexible sector architecture  
— Eight uniform sectors  
Compatible with JEDEC standards  
— Any combination of sectors can be erased  
— Supports full chip erase  
— Pinout and software compatible with  
single-power-supply flash  
Sector protection  
— Superior inadvertent write protection  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
Data# Polling and Toggle Bits  
— Provides a software method of detecting  
program or erase cycle completion  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
Publication# 16736 Rev: G Amendment/+3  
Issue Date: July 1998  

与AM29F010-70FEB相关器件

型号 品牌 获取价格 描述 数据表
AM29F010-70FI AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-70FIB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-70JC AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-70JCB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-70JE AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-70JEB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-70JI AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-70JIB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-70PC AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-70PCB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory