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AM29F010-45JI PDF预览

AM29F010-45JI

更新时间: 2024-11-07 23:04:19
品牌 Logo 应用领域
超微 - AMD 内存集成电路
页数 文件大小 规格书
31页 349K
描述
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

AM29F010-45JI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:PLASTIC, LCC-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.58
最长访问时间:45 ns其他特性:EMBEDDED ALGORITHM; HARDWARE DATA PROTECTION
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:8端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:3.556 mm
部门规模:16K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:11.43 mm
Base Number Matches:1

AM29F010-45JI 数据手册

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FINAL  
Am29F010  
1 Megabit (128 K x 8-bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— 5.0 V ± 10% for read, erase, and program  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
operations  
— Simplifies system-level power requirements  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
High performance  
— 45 ns maximum access time  
Minimum 100,000 program/erase cycles  
Low power consumption  
guaranteed  
— 30 mA max active read current  
— 50 mA max program/erase current  
— <25 µA typical standby current  
Package options  
— 32-pin PLCC  
— 32-pin TSOP  
— 32-pin PDIP  
Flexible sector architecture  
— Eight uniform sectors  
Compatible with JEDEC standards  
— Any combination of sectors can be erased  
— Supports full chip erase  
— Pinout and software compatible with  
single-power-supply flash  
Sector protection  
— Superior inadvertent write protection  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
Data# Polling and Toggle Bits  
— Provides a software method of detecting  
program or erase cycle completion  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
Publication# 16736 Rev: G Amendment/+2  
Issue Date: March 1998  

AM29F010-45JI 替代型号

型号 品牌 替代类型 描述 数据表
SST39SF010A-45-4I-NHE SST

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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
M29F010B45K6T STMICROELECTRONICS

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1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory

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