5秒后页面跳转
AM29F010-45FCB PDF预览

AM29F010-45FCB

更新时间: 2024-09-19 22:18:07
品牌 Logo 应用领域
超微 - AMD /
页数 文件大小 规格书
31页 349K
描述
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

AM29F010-45FCB 技术参数

生命周期:Obsolete包装说明:TSOP1-R,
Reach Compliance Code:unknown风险等级:5.8
最长访问时间:45 nsJESD-30 代码:R-PDSO-G32
长度:18.4 mm内存密度:1048576 bit
内存集成电路类型:EEPROM CARD内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1-R
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:2.7 V
座面最大高度:1.2 mm最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
宽度:8 mmBase Number Matches:1

AM29F010-45FCB 数据手册

 浏览型号AM29F010-45FCB的Datasheet PDF文件第2页浏览型号AM29F010-45FCB的Datasheet PDF文件第3页浏览型号AM29F010-45FCB的Datasheet PDF文件第4页浏览型号AM29F010-45FCB的Datasheet PDF文件第5页浏览型号AM29F010-45FCB的Datasheet PDF文件第6页浏览型号AM29F010-45FCB的Datasheet PDF文件第7页 
FINAL  
Am29F010  
1 Megabit (128 K x 8-bit)  
CMOS 5.0 Volt-only, Uniform Sector Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— 5.0 V ± 10% for read, erase, and program  
— Embedded Erase algorithm automatically  
pre-programs and erases the chip or any  
combination of designated sector  
operations  
— Simplifies system-level power requirements  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
High performance  
— 45 ns maximum access time  
Minimum 100,000 program/erase cycles  
Low power consumption  
guaranteed  
— 30 mA max active read current  
— 50 mA max program/erase current  
— <25 µA typical standby current  
Package options  
— 32-pin PLCC  
— 32-pin TSOP  
— 32-pin PDIP  
Flexible sector architecture  
— Eight uniform sectors  
Compatible with JEDEC standards  
— Any combination of sectors can be erased  
— Supports full chip erase  
— Pinout and software compatible with  
single-power-supply flash  
Sector protection  
— Superior inadvertent write protection  
— Hardware-based feature that disables/re-  
enables program and erase operations in any  
combination of sectors  
Data# Polling and Toggle Bits  
— Provides a software method of detecting  
program or erase cycle completion  
— Sector protection/unprotection can be  
implemented using standard PROM  
programming equipment  
Publication# 16736 Rev: G Amendment/+2  
Issue Date: March 1998  

与AM29F010-45FCB相关器件

型号 品牌 获取价格 描述 数据表
AM29F010-45FE AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-45FEB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-45FI AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-45FIB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-45JC AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-45JCB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-45JE AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-45JEB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-45JI AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F010-45JIB AMD

获取价格

1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory