Datasheet > AM29DL164DT120VRF

AM29DL164DT120VRF

更新时间： 2024-01-08 16:13:55

品牌	Logo	应用领域
飞索 - SPANSION		内存集成电路闪存
页数	文件大小	规格书
57页	1243K
描述
Flash, 1MX16, 120ns, PBGA48, 8.15 X 6.15 MM, 0.80 MM PITCH, LEAD FREE, VBGA-48

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AM29DL164DT120VRF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	VFBGA, BGA48,6X8,32
针数：	48	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.84	最长访问时间：	120 ns
其他特性：	TOP BOOT BLOCK	备用内存宽度：	8
启动块：	TOP	命令用户界面：	YES
通用闪存接口：	YES	数据轮询：	YES
JESD-30 代码：	R-PBGA-B48	JESD-609代码：	e1
长度：	8.15 mm	内存密度：	16777216 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	8,31
端子数量：	48	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	VFBGA	封装等效代码：	BGA48,6X8,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	3/3.3 V	编程电压：	3 V
认证状态：	Not Qualified	就绪/忙碌：	YES
座面最大高度：	1 mm	部门规模：	8K,64K
最大待机电流：	0.000005 A	子类别：	Flash Memories
最大压摆率：	0.045 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	TIN SILVER COPPER
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
切换位：	YES	类型：	NOR TYPE
宽度：	6.15 mm	Base Number Matches：	1

AM29DL164DT120VRF 数据手册

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D A T A S H E E T

GENERAL DESCRIPTION

The Am29DL16xD family consists of 16 megabit, 3.0

volt-only flash memory devices, organized as 1,048,576

words of 16 bits each or 2,097,152 bytes of 8 bits each.

Word mode data appears on DQ0–DQ15; byte mode

data appears on DQ0–DQ7. The device is designed to

be programmed in-system with the standard 3.0 volt

V_CCsupply, and can also be programmed in standard

EPROM programmers.

or both. Customer Lockable parts may utilize the Se-

cured Silicon Sector as bonus space, reading and

writing like any other flash sector, or may permanently

lock their own code there.

DMS (Data Management Software) allows systems to

easily take advantage of the advanced architecture of

the simultaneous read/write product line by allowing re-

moval of EEPROM devices. DMS will also allow the

system software to be simplified, as it will perform all

functions necessary to modify data in file structures, as

opposed to single-byte modifications. To write or up-

date a particular piece of data (a phone number or

configuration data, for example), the user only needs to

state which piece of data is to be updated, and where

the updated data is located in the system. This is an

advantage compared to systems where user-written

software must keep track of the old data location, sta-

tus, logical to physical translation of the data onto the

Flash memory device (or memory devices), and more.

Using DMS, user-written software does not need to in-

terface with the Flash memory directly. Instead, the

user's software accesses the Flash memory by calling

one of only six functions. AMD provides this software to

simplify system design and software integration efforts.

The device is available with an access time of 70, 90,

or 120 ns. The devices are offered in 48-pin TSOP,

48-ball Fine-pitch BGA, 48-ball Very Thin Profile

Fine-pitch BGA, and 64-ball Fortified BGA packages.

Standard control pins—chip enable (CE#), write enable

(WE#), and output enable (OE#)—control normal read

and write operations, and avoid bus contention issues.

The device requires only a single 3.0 volt power sup-

ply for both read and write functions. Internally

generated and regulated voltages are provided for the

program and erase operations.

Simultaneous Read/Write Operations with

Zero Latency

The Simultaneous Read/Write architecture provides si-

multaneous operation by dividing the memory space

into two banks. The device can improve overall system

performance by allowing a host system to program or

erase in one bank, then immediately and simulta-

neously read from the other bank, with zero latency.

This releases the system from waiting for the comple-

tion of program or erase operations.

The device offers complete compatibility with the

JEDEC single-power-supply Flash command set

standard. Commands are written to the command reg-

ister using standard microprocessor write timings.

Reading data out of the device is similar to reading

from other Flash or EPROM devices.

The host system can detect whether a program or

erase operation is complete by using the device status

bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2

(toggle bits). After a program or erase cycle has been

completed, the device automatically returns to reading

array data.

The Am29DL16xD devices uses multiple bank archi-

tectures to provide flexibility for different applications.

Four devices are available with these bank sizes:

Device

DL161

DL162

DL163

DL164

Bank 1

0.5 Mb

2 Mb

Bank 2

15.5 Mb

14 Mb

12 Mb

8 Mb

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

4 Mb

8 Mb

Am29DL16xD Features

Hardware data protection measures include a low

V_CCdetector that automatically inhibits write operations

during power transitions. The hardware sector pro-

tection feature disables both program and erase

operations in any combination of the sectors of mem-

ory. This can be achieved in-system or via

programming equipment.

The Secured Silicon Sector is an extra sector capa-

ble of being permanently locked by AMD or customers.

The Secured Silicon Sector Indicator Bit (DQ7) is

permanently set to a 1 if the part is factory locked,

and set to a 0 if customer lockable. This way, cus-

tomer lockable parts can never be used to replace a

factory locked part. Current version of device has 64

Kbytes; future versions will have only 256 bytes.

This should be considered during system design.

The device offers two power-saving features. When

addresses have been stable for a specified amount of

time, the device enters the automatic sleep mode.

The system can also place the device into the

standby mode. Power consumption is greatly re-

duced in both modes.

Factory locked parts provide several options. The Se-

cured Silicon Sector may store a secure, random 16

byte ESN (Electronic Serial Number), customer code

(programmed through AMD’s ExpressFlash service),

Am29DL16xD

21533E6 February 26, 2009

1 2 345 6 7...57

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与AM29DL164DT120VRF相关器件

型号	品牌	获取价格	描述	数据表
AM29DL164DT120VRI	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL164DT120VRI	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA48, 8.15 X 6.15 MM, 0.80 MM PITCH, VBGA-48
AM29DL164DT120WCE	ETC	获取价格	x8/x16 Flash EEPROM
AM29DL164DT120WCEN	ETC	获取价格	x8/x16 Flash EEPROM
AM29DL164DT120WCF	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL164DT120WCF	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
AM29DL164DT120WCI	AMD	获取价格	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL164DT120WCI	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, FBGA-48
AM29DL164DT120WCIN	ETC	获取价格	x8/x16 Flash EEPROM
AM29DL164DT120WCK	SPANSION	获取价格	Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, FBGA-48

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