Datasheet > AM29DL164DT120VRF

AM29DL164DT120VRF

更新时间： 2024-02-13 07:23:19

品牌	Logo	应用领域
飞索 - SPANSION		内存集成电路闪存
页数	文件大小	规格书
57页	1243K
描述
Flash, 1MX16, 120ns, PBGA48, 8.15 X 6.15 MM, 0.80 MM PITCH, LEAD FREE, VBGA-48

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AM29DL164DT120VRF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	VFBGA, BGA48,6X8,32
针数：	48	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.84	最长访问时间：	120 ns
其他特性：	TOP BOOT BLOCK	备用内存宽度：	8
启动块：	TOP	命令用户界面：	YES
通用闪存接口：	YES	数据轮询：	YES
JESD-30 代码：	R-PBGA-B48	JESD-609代码：	e1
长度：	8.15 mm	内存密度：	16777216 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	8,31
端子数量：	48	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	1MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	VFBGA	封装等效代码：	BGA48,6X8,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	3/3.3 V	编程电压：	3 V
认证状态：	Not Qualified	就绪/忙碌：	YES
座面最大高度：	1 mm	部门规模：	8K,64K
最大待机电流：	0.000005 A	子类别：	Flash Memories
最大压摆率：	0.045 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	TIN SILVER COPPER
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
切换位：	YES	类型：	NOR TYPE
宽度：	6.15 mm	Base Number Matches：	1

AM29DL164DT120VRF 数据手册

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DATA SHEET

Am29DL16xD

16 Megabit (2 M x 8-Bit/1 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

This product family has been retired and is not recommended for designs.

For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL16xD and is the factory-recommended migration

path. Please refer to the S29JL032H data sheet for specifications and ordering information.

For new and current designs involving Fine-pitch BGA (FBGA) packages, S29PL032J supersedes Am29DL16xD and is the factory-recom-

mended migration path. Please refer to the S29PL-J data sheet for specifications and ordering information.

Availability of this document is retained for reference and historical purposes only.

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

— 10 mA active read current at 5 MHz

— 200 nA in standby or automatic sleep mode

■ Minimum 1 million write cycles guaranteed per sector

■ Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in other bank

— Zero latency between read and write operations

■ Multiple bank architectures

■ 20 Year data retention at 125°C

— Reliable operation for the life of the system

SOFTWARE FEATURES

— Four devices available with different bank sizes (refer

■ Data Management Software (DMS)

to Table 2)

— AMD-supplied software manages data programming

and erasing, enabling EEPROM emulation

— Eases sector erase limitations

■ Secured Silicon Sector

— Current version of device has 64 Kbytes; future

versions will have 256 bytes

■ Supports Common Flash Memory Interface (CFI)

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

— Customer lockable: Can be read, programmed, or

erased just like other sectors. Once locked, data

cannot be changed

■ Erase Suspend/Erase Resume

— Suspends erase operations to allow programming in

same bank

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

■ Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero

HARDWARE FEATURES

■ Any combination of sectors can be erased

■ Package options

— 48-ball Very Thin Profile Fine-pitch BGA

— 48-ball Fine-pitch BGA

— 64-ball Fortified BGA

— 48-pin TSOP

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■ Hardware reset pin (RESET#)

— Hardware method of resetting the internal state

machine to reading array data

■ Top or bottom boot block

■ Manufactured on 0.23 µm process technology

■ WP#/ACC input pin

— Compatible with Am29DL16xC devices

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply flash standard

— Write protect (WP#) function allows protection of two

outermost boot sectors, regardless of sector protect status

— Acceleration (ACC) function accelerates program

timing

PERFORMANCE CHARACTERISTICS

■ Sector protection

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

■ High performance

— Access time as fast 70 ns

— Program time: 7 µs/word typical utilizing Accelerate

function

■ Ultra low power consumption (typical values)

— 2 mA active read current at 1 MHz

Publication# 21533 Rev: E Amendment: 6

Issue Date: February 26, 2009

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

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与AM29DL164DT120VRF相关器件

型号	品牌	描述	获取价格	数据表
AM29DL164DT120VRI	AMD	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem	获取价格
AM29DL164DT120VRI	SPANSION	Flash, 1MX16, 120ns, PBGA48, 8.15 X 6.15 MM, 0.80 MM PITCH, VBGA-48	获取价格
AM29DL164DT120WCE	ETC	x8/x16 Flash EEPROM	获取价格
AM29DL164DT120WCEN	ETC	x8/x16 Flash EEPROM	获取价格
AM29DL164DT120WCF	AMD	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem	获取价格
AM29DL164DT120WCF	SPANSION	Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48	获取价格

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