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ALD1108EPCL

更新时间： 2024-02-23 18:32:55
品牌 Logo 应用领域
先进线性 - ALD /
页数 文件大小 规格书
14页 146K
描述
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)

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ALD1108EPCL 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.57Is Samacsys：N
模拟集成电路 - 其他类型：ANALOG CIRCUITJESD-30 代码：R-PDSO-G16
功能数量：4端子数量：16
最高工作温度：70 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
最大供电电压 (Vsup)：10 V最小供电电压 (Vsup)：1.2 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子位置：DUAL
Base Number Matches：1

ALD1108EPCL 数据手册

 浏览型号ALD1108EPCL的Datasheet PDF文件第2页浏览型号ALD1108EPCL的Datasheet PDF文件第3页浏览型号ALD1108EPCL的Datasheet PDF文件第4页浏览型号ALD1108EPCL的Datasheet PDF文件第5页浏览型号ALD1108EPCL的Datasheet PDF文件第6页浏览型号ALD1108EPCL的Datasheet PDF文件第7页 
TM  
A
L
D
DVANCED  
INEAR  
EVICES, INC.  
®
e
EPAD  
A
ALD1108E/ALD1110E  
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)  
GENERAL DESCRIPTION  
BENEFITS  
ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically  
Programmable Analog Device) N-channel MOSFETs with electrically  
adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are  
matched and adjusted (e-trimmed) at the factory resulting in quad/dual  
MOSFETsthatarehighlymatchedinthresholdvoltagesandotherelectrical  
characteristics. For a given input voltage, the threshold voltage of a  
MOSFET device determines its drain on-current, resulting in an on-  
resistancecharacteristicthatcanbepreciselypresetandthencontrolledby  
the input voltage very accurately.  
• Precision matched electrically after  
packaging  
• Simple, elegant single-chip user option  
to trim voltage/current values  
• Excellent device matching characteristics  
with or without additional electrical trim  
• Remotely and electrically trim parameters  
on circuits that are physically inaccessible  
PIN CONFIGURATION  
Using an ALD1108E/ALD1110E is simple and straight forward. The  
MOSFETs function as n-channel MOSFETs, except that all the devices  
have exceptional matching to each other in electrical characteristics. Since  
these devices are on the same monolithic chip, they also exhibit excellent  
tempco matching characteristics.  
ALD1110E  
EPAD 2  
EPAD 1  
1
2
3
4
P
G
D
8
7
6
5
P
N2  
N1  
G
D
N2  
N1  
TheseMOSFETdeviceshaveverylowinputcurrents, andasaresultavery  
N1  
-
N2  
+
12  
high input impedance (>10 Ohm). The gate voltage from a control source  
+
v
S
, V  
12  
V
can drive many MOSFET inputs with practically no loading effects. Used in  
precision current mirror or current multiplier applications, they can be used  
to provide a current source over a 100nA to 3mA range, and with either a  
positive, negative or zero tempco.  
TOP VIEW  
SAL, PAL, DA PACKAGES  
ALD1108E  
EPAD 1  
EPAD 2  
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))  
1
2
3
4
5
6
7
8
P
G
D
16  
15  
14  
13  
12  
11  
10  
9
P
N2  
N1  
N1  
N1  
Operating Temperature Range*  
G
D
N2  
0°C to +70°C  
0°C to +70°C  
-55°C to +125°C  
N2  
+
+
v
S
V
12  
8-Pin SOIC  
Package  
8-Pin Plastic Dip  
Package  
8-Pin CERDIP  
Package  
-
-
v
V
S
D
34  
D
N4  
N3  
ALD1110ESAL  
ALD1110EPAL  
ALD1110EDA  
G
P
G
N4  
N3  
N3  
16-Pin SOIC  
Package  
16-Pin Plastic Dip  
Package  
16-Pin CERDIP  
Package  
P
N4  
EPAD 4  
EPAD 3  
TOP VIEW  
SCL, PCL, DC PACKAGES  
ALD1108ESCL  
ALD1108EPCL  
ALD1108EDC  
* Contact factory for leaded (non-RoHS) or high temperature versions.  
BLOCK DIAGRAM  
BLOCK DIAGRAM  
ALD1110E  
ALD1108E  
V+(5)  
V+(13)  
P
(16)  
D
(11)  
N3  
P
(1)  
D
(3)  
P
(9)  
D
(6)  
P
(8)  
N4  
D
N2  
(14)  
D
N2  
(6)  
P (8)  
N2  
P
(1)  
D
(3)  
N1  
N2  
N
N1  
N3  
N4  
N4  
N1  
(2)  
~
G
~
G
(2)  
N1  
(10)  
N3  
G
(7)  
G
(15)  
N2  
G
N2  
(7)  
G
N1  
EPAD 2  
EPAD 3  
EPAD 4  
EPAD 1  
~
EPAD 1  
EPAD 2  
~
S
12  
(4)  
V- (5)  
S
(12)  
34  
S
(4)  
12  
V- (4)  
Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  
1234567...14

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