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ALD110908A

更新时间： 2024-11-01 08:24:27
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QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY

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ALD110908A 数据手册

 浏览型号ALD110908A的Datasheet PDF文件第2页 
TM  
ADVANCED  
LINEAR  
®
e
EPAD  
A
DEVICES, INC.  
ALD110808/ALD110808A/ALD110908/ALD110908A  
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®  
V
= +0.8V  
GS(th)  
MATCHED PAIR MOSFET ARRAY  
APPLICATIONS  
GENERAL DESCRIPTION  
• Precision current mirrors  
• Precision current sources  
• Voltage choppers  
• Differential amplifier input stage  
• Voltage comparator  
ALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/  
dual N-Channel MOSFETs matched at the factory using ALD’s proven  
EPAD® CMOS technology. These devices are intended for low voltage,  
small signal applications.  
• Voltage bias circuits  
• Sample and Hold  
• Analog inverter  
• Level shifters  
• Source followers and buffers  
• Current multipliers  
These MOSFET devices are built on the same monolithic chip, so they  
exhibit excellent temperature tracking characteristics. They are versatile  
as circuit elements and are useful design component for a broad range of  
analog applications. They are basic building blocks for current sources,  
differential amplifier input stages, transmission gates, and multiplexer  
applications. For most applications, connect V- and N/C pins to the most  
negative voltage potential in the system and V+ pin to the most positive  
voltage potential (or left open unused). All other pins must have voltages  
within these voltage limits.  
• Analog switches / multiplexers  
ALD110808/ALD110908 devices are built for minimum offset voltage and  
differential thermal response, and they are suited for switching and ampli-  
fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias  
current, low input capacitance and fast switching speed are desired. As  
these are MOSFET devices, they feature very large (almost infinite) cur-  
rent gain in a low frequency, or near DC, operating environment.  
PIN CONFIGURATION  
ALD110808  
-
-
V
V
1
2
3
4
5
6
7
8
N/C*  
16  
15  
14  
13  
12  
11  
10  
9
N/C*  
These devices are suitable for use in precision applications which require  
very high current gain, beta, such as current mirrors and current sources.  
The high input impedance and the high DC current gain of the Field Effect  
Transistors result from extremely low current loss through the control gate.  
The DC current gain is limited by the gate input leakage current, which is  
specified at 30pA at room temperature. For example, DC beta of the  
device at a drain current of 3mA and input leakage current of 30pA at  
25°C is = 3mA/30pA = 100,000,000.  
G
D
V
G
N2  
N1  
M 2  
M 1  
D
N1  
N2  
+
+
V
S
12  
-
-
V
S
V
34  
D
N3  
D
N4  
N4  
M 4  
M 3  
FEATURES  
G
G
N3  
N/C*  
N/C*  
• Enhancement-mode (normally off)  
• Standard Gate Threshold Voltages: +0.8V  
• Matched MOSFET to MOSFET characteristics  
• Tight lot to lot parametric control  
• Low input capacitance  
-
-
V
V
PC, SC PACKAGES  
ALD110908  
• V  
match to 2mV and 10mV  
GS(th)  
• High input impedance — 1012Ω typical  
• Positive,zero, and negative V  
• DC current gain >108  
temperature coefficient  
GS(th)  
-
-
V
V
• Low input and output leakage currents  
1
2
3
4
8
7
6
5
N/C*  
N/C*  
G
N2  
G
N1  
ORDERING INFORMATION  
M 1  
M 2  
D
N1  
D
N2  
Operating Temperature Range*  
0°C to +70°C 0°C to +70°C  
-
-
S
12  
V
V
16-Pin  
Plastic Dip  
Package  
16-Pin  
SOIC  
Package  
8-Pin  
Plastic Dip  
Package  
8Pin  
SOIC  
PA, SA PACKAGES  
Package  
*N/C pins are internally connected.  
Connect to V- to reduce noise  
ALD110808APC ALD110808ASC ALD110908APA ALD110908ASA  
ALD110808 PC ALD110808SC ALD110908PA ALD110908SA  
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.  
Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  
12

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