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ALD110908ASAL

更新时间： 2024-11-27 12:22:27
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QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

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TM  
A
L
D
DVANCED  
INEAR  
EVICES, INC.  
®
e
EPAD  
E
A
ALD110808/ALD110808A/ALD110908/ALD110908A  
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®  
PRECISION MATCHED PAIR MOSFET ARRAY  
V
= +0.80V  
GS(th)  
GENERAL DESCRIPTION  
APPLICATIONS  
ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision  
monolithic quad/dual enhancement mode N-Channel MOSFETs matched  
at the factory using ALD’s proven EPAD® CMOS technology. These de-  
vices are intended for low voltage, small signal applications.  
• Precision current mirrors  
• Precision current sources  
• Voltage choppers  
• Differential amplifier input stage  
• Voltage comparator  
• Voltage bias circuits  
• Sample and Hold  
• Analog inverter  
These MOSFET devices are built on the same monolithic chip, so they  
exhibit excellent temperature tracking characteristics. They are versatile  
as circuit elements and are useful design component for a broad range of  
analog applications. They are basic building blocks for current sources,  
differential amplifier input stages, transmission gates, and multiplexer  
applications. For most applications, connect the V- and IC pins to the most  
negative voltage in the system and the V+ pin to the most positive voltage.  
All other pins must have voltages within these voltage limits at all times.  
• Level shifters  
• Source followers and buffers  
• Current multipliers  
• Analog switches / multiplexers  
ALD110808/ALD110908 devices are built for minimum offset voltage and  
differential thermal response, and they are suited for switching and ampli-  
fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias  
current, low input capacitance and fast switching speed are desired. As  
these are MOSFET devices, they feature very large (almost infinite) cur-  
rent gain in a low frequency, or near DC, operating environment.  
PIN CONFIGURATION  
ALD110808  
-
-
V
V
These devices are suitable for use in precision applications which require  
very high current gain, beta, such as current mirrors and current sources.  
The high input impedance and the high DC current gain of the Field Effect  
Transistors result from extremely low current loss through the control gate.  
The DC current gain is limited by the gate input leakage current, which is  
specified at 30pA at room temperature. For example, DC beta of the  
device at a drain current of 3mA and input leakage current of 30pA at  
25°C is = 3mA/30pA = 100,000,000.  
1
2
3
4
5
6
7
8
IC*  
G
16  
15  
14  
IC*  
G
N2  
N1  
M 2  
M 1  
D
N2  
D
S
N1  
+
+
13  
12  
11  
10  
9
V
V
12  
-
-
V
S
V
34  
D
D
N4  
N3  
M 4  
M 3  
G
N4  
G
N3  
FEATURES  
IC*  
IC*  
-
-
V
• Enhancement-mode (normally off)  
• Standard Gate Threshold Voltages: +0.80V  
• Matched MOSFET to MOSFET characteristics  
• Tight lot to lot parametric control  
V
SCL, PCL PACKAGES  
• Low input capacitance  
ALD110908  
-
• V  
match to 2mV and 10mV  
GS(th)  
• High input impedance — 1012Ω typical  
-
V
V
• Positive, zero, and negative V  
• DC current gain >108  
temperature coefficient  
GS(th)  
1
8
7
6
5
IC*  
IC*  
• Low input and output leakage currents  
G
N2  
G
2
3
4
N1  
M 1  
M 2  
D
D
N2  
N1  
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))  
-
-
S
V
V
12  
Operating Temperature Range*  
0°C to +70°C  
0°C to +70°C  
16-Pin  
SOIC  
Package  
16-Pin  
Plastic Dip  
Package  
8-Pin  
SOIC  
Package  
8-Pin  
Plastic Dip  
Package  
SAL, PAL PACKAGES  
*IC pins are internally connected.  
Connect to V-  
ALD110808ASCL ALD110808APCL ALD110908ASAL ALD110908APAL  
ALD110808SCL ALD110808PCL ALD110908SAL ALD110908PAL  
* Contact factory for industrial temp. range or user-specified threshold voltage values.  
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  
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