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ALD110904PAL

更新时间: 2024-09-26 12:22:27
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11页 108K
描述
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

ALD110904PAL 技术参数

是否无铅: 不含铅生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.04Base Number Matches:1

ALD110904PAL 数据手册

 浏览型号ALD110904PAL的Datasheet PDF文件第2页浏览型号ALD110904PAL的Datasheet PDF文件第3页浏览型号ALD110904PAL的Datasheet PDF文件第4页浏览型号ALD110904PAL的Datasheet PDF文件第5页浏览型号ALD110904PAL的Datasheet PDF文件第6页浏览型号ALD110904PAL的Datasheet PDF文件第7页 
TM  
A
L
D
DVANCED  
INEAR  
EVICES, INC.  
®
e
EPAD  
A
ALD110804/ALD110904  
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®  
PRECISION MATCHED PAIR MOSFET ARRAY  
V
= +0.40V  
GS(th)  
GENERAL DESCRIPTION  
APPLICATIONS  
ALD110804/ALD110904 are high precision monolithic quad/dual enhance-  
ment mode N-Channel MOSFETS matched at the factory using ALD’s  
proven EPAD® CMOS technology. These devices are intended for low  
voltage, small signal applications. TheALD110804/ALD110904 MOSFETS  
are designed and built for exceptional device electrical characteristics  
matching. Since these devices are on the same monolithic chip, they also  
exhibit excellent tempco tracking characteristics. They are versatile circuit  
elements useful as design components for a broad range of analog appli-  
cations, such as basic building blocks for current sources, differential am-  
plifier input stages, transmission gates, and multiplexer applications. For  
• Ultra low power (nanowatt) analog and digital  
circuits  
• Ultra low operating voltage(<0.40V) circuits  
• Sub-threshold biased and operated circuits  
• Precision current mirrors and current sources  
• Nano-Amp current sources  
• High impedance resistor simulators  
• Capacitive probes and sensor interfaces  
• Differential amplifier input stages  
• Discrete Voltage comparators and level shifters  
• Voltage bias circuits  
-
most applications, connect the V and IC pins to the most negative volt-  
+
age in the system and the V pin to the most positive voltage. All other  
• Sample and Hold circuits  
pins must have voltages within these voltage limits at all times.  
• Analog and digital inverters  
• Charge detectors and charge integrators  
• Source followers and High Impedance buffers  
• Current multipliers  
The ALD110804/ALD110904 devices are built for minimum offset voltage  
and differential thermal response, and they are suited for switching and  
amplifying applications in <+0.1V to +10V systems where low input bias  
current, low input capacitance and fast switching speed are desired, as  
these devices exhibit well controlled turn-off and sub-threshold character-  
istics and can be biased and operated in the sub-threshold region. Since  
these are MOSFET devices, they feature very large (almost infinite) cur-  
rent gain in a low frequency, or near DC, operating environment.  
• Discrete Analog switches / multiplexers  
PIN CONFIGURATION  
ALD110804  
The ALD110804/ALD110904 are suitable for use in very low operating  
voltage or very low power (nanowatt), precision applications which require  
very high current gain, beta, such as current mirrors and current sources.  
The high input impedance and the high DC current gain of the Field Effect  
Transistors result from extremely low current loss through the control gate.  
The DC current gain is limited by the gate input leakage current, which is  
specified at 30pA at room temperature. For example, DC beta of the de-  
vice at a drain current of 3mA and input leakage current of 30pA at 25°C  
is = 3mA/30pA = 100,000,000.  
-
-
V
V
1
2
3
4
5
6
7
8
IC*  
G
16  
15  
14  
13  
12  
11  
10  
9
IC*  
G
N2  
N1  
M 2  
M 1  
D
V
S
D
S
N2  
N1  
+
+
V
12  
-
-
V
V
34  
D
D
N4  
N3  
M 4  
FEATURES  
M 3  
G
N4  
G
N3  
• Enhancement-mode (normally off)  
• Precision Gate Threshold Voltage of +0.40V  
• Matched MOSFET to MOSFET characteristics  
• Tight lot to lot parametric control  
IC*  
IC*  
-
-
V
V
SCL, PCL PACKAGES  
• Low input capacitance  
• V  
match (V ) to 10mV  
GS(th)  
OS  
• High input impedance — 1012typical  
ALD110904  
-
• Positive, zero, and negative V  
temperature coefficient  
GS(th)  
• DC current gain >108  
-
V
V
1
2
3
4
8
7
6
5
IC*  
G
IC*  
G
• Low input and output leakage currents  
N2  
N1  
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))  
M 1  
M 2  
D
S
D
V
N1  
N2  
Operating Temperature Range*  
0°C to +70°C  
0°C to +70°C  
-
-
V
12  
16-Pin  
SOIC  
Package  
16-Pin  
Plastic Dip  
Package  
8-Pin  
SOIC  
Package  
8-Pin  
Plastic Dip  
Package  
SAL, PAL PACKAGES  
*IC pins are internally connected.  
Connect to V-  
ALD110804SCL ALD110804PCL ALD110904SAL ALD110904PAL  
* Contact factory for industrial temp. range or user-specified threshold voltage values.  
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  

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