Datasheet > ALD110902SA

ALD110902SA

更新时间： 2024-11-01 04:32:15

品牌	Logo	应用领域
先进线性 - ALD		/
页数	文件大小	规格书
2页	38K
描述
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY

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ALD110902SA 技术参数

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风险等级：	5.58	Base Number Matches：	1

ALD110902SA 数据手册

ADVANCED

LINEAR

EPAD

DEVICES, INC.

ALD110802/ALD110902

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

= +0.2V

GS(th)

MATCHED PAIR MOSFET ARRAY

APPLICATIONS

GENERAL DESCRIPTION

• Ultra low power (nanowatt) analog and digital

circuits

• Ultra low operating voltage(<0.2V) circuits

• Sub-threshold biased and operated circuits

• Precision current mirrors and current sources

• Nano-Amp current sources

• High impedance resistor simulators

• Capacitive probes and sensor interfaces

• Differential amplifier input stages

• Discrete Voltage comparators and level shifters

• Voltage bias circuits

ALD110802/ALD110902 are monolithic quad/dual N-Channel MOSFETS

matched at the factory using ALD’s proven EPAD® CMOS technology.

These devices are intended for low voltage, small signal applications.

The ALD110802/ALD110902 MOSFETS are designed and built for ex-

ceptional device electrical characteristics matching. Since these devices

are on the same monolithic chip, they also exhibit excellent tempco tracking

characteristics. They are versatile circuit elements useful as design com-

ponents for a broad range of analog applications, such as basic building

blocks for current sources, differential amplifier input stages, transmis-

sion gates, and multiplexer applications. For most applications, connect

V and N/C pins to the most negative voltage potential in the system and

• Sample and Hold circuits

• Analog and digital inverters

pin to the most positive voltage potential (or left open unused). All

other pins must have voltages within these voltage limits.

• Charge detectors and charge integrators

• Source followers and High Impedance buffers

• Current multipliers

TheALD110802/ALD110902 devices are built for minimum offset voltage

and differential thermal response, and they are suited for switching and

amplifying applications in <+0.1V to +10V systems where low input bias

current, low input capacitance and fast switching speed are desired, as

these devices exhibit well controlled turn-off and sub-threshold charac-

teristics and can be biased and operated in the sub-threshold region.

Since these are MOSFET devices, they feature very large (almost infi-

nite) current gain in a low frequency, or near DC, operating environment.

• Discrete Analog switches / multiplexers

PIN CONFIGURATION

ALD110802

The ALD110802/ALD110902 are suitable for use in very low operating

voltage or very low power (nanowatt), precision applications which re-

quire very high current gain, beta, such as current mirrors and current

sources. The high input impedance and the high DC current gain of the

Field Effect Transistors result from extremely low current loss through

the control gate. The DC current gain is limited by the gate input leakage

current, which is specified at 30pA at room temperature. For example,

DC beta of the device at a drain current of 3mA and input leakage current

of 30pA at 25°C is = 3mA/30pA = 100,000,000.

N/C*

M 2

M 1

FEATURES

M 4

M 3

• Enhancement-mode (normally off)

• Precision Gate Threshold Voltage of +0.2V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

N/C*

PC, SC PACKAGES

ALD110902

• Low input capacitance

• V

match (V ) to 10mV

GS(th)

• High input impedance — 10¹²Ω typical

• Positive, zero, and negative V

• DC current gain >10⁸

• Low input and output leakage currents

temperature coefficient

GS(th)

N/C*

ORDERING INFORMATION

M 1

M 2

Operating Temperature Range*

0°C to +70°C 0°C to +70°C

16-Pin

Plastic Dip

Package

16-Pin

SOIC

Package

8-Pin

Plastic Dip

Package

8Pin

SOIC

Package

PA, SA PACKAGES

*N/C pins are internally connected.

Connect to V- to reduce noise

ALD110802PC ALD110802SC ALD110902PA ALD110902SA

* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.

www.aldinc.com

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与ALD110902SA相关器件

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ALD110902SAL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110904	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110904PA	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110904PAL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110904SA	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110904SAL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
ALD110908	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110908A	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110908APA	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD110908APAL	ALD	获取价格	QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

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