Accutek
Microcircuit
Corporation
AK581024AG / AK581024AS
1,048,576 x 8 bit CMOS
Dynamic Random Access Memory
DESCRIPTION
Front View
30-Pin SIM
The Accutek AK581024 high density memory modules is a random
access memory organized in 1 Meg x 8 bit words. The assembly
consists of two 1 Meg x 4 DRAMs in surface mount packages
mounted to a printed circuit board. The module can be configured
as a leadless 30 pad SIMM or a leaded 30 pin SIP. This packaging
approach provides a better than 6 to 1 density increase over stan-
dard DIP packaging.
+
+
30
1
The operation of the AK581024 is identical to two 1 Meg x 4 DRAMs.
The data input/output is brought out separately for each 1 Meg x 4
device, with common RAS, CAS and WE control. The OE pins are
tied to Vss which dictates the use of early-write cycles to prevent
contention of D and Q. Since the Write-Enable (WE) signal must al-
ways go low before CAS in a write cycle, Read-Write and
Read-Modify-Write operation is not possible.
30-Pin SIP
+
+
1
FEATURES
· 1.10 Watt active and 23.5 mWatt standby (max)
· Operating free air temperature: 00 to 700C
· 1 Meg x 8 bit organization
· Optional 30 Pad SIM (Single In-Line Module) or 30 Pin leaded
SIP (Single In-Line Package)
· Upward compatible with AK584096 and AK5816384
· Functionally and Pin compatible with AK481024
· Available with access times of 60 to 100 nS
· JEDEC approved pinout
· Common CAS, RAS and WE control for eight DQ lines
· Separate CAS control for one separate pair of D and Q lines
· 1024 refresh cycles/16ms, A0 to A9
PIN NOMENCLATURE
PIN ASSIGNMENT
FUNCTIONAL DIAGRAM
PIN #
1
SYMBOL
Vcc
CAS
DQ1
A0
PIN #
SYMBOL
DQ5
A8
DQ1 - DQ8
A0 - A9
CAS
Data In/Data Out
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Address Inputs
Column Address Strobe
Row Address Strobe
Write Enable
2
3
A9
4
NC
RAS
5
A1
DQ6
WE
Vss
DQ7
NC
WE
6
DQ2
A2
7
Vcc
5v Supply
8
A3
Vss
Ground
9
Vss
DQ3
A4
NC
No Connect
10
11
12
13
14
15
DQ8
NC
A5
RAS
NC
MODULE OPTIONS
DQ4
A6
NC
Leadless SIM: AK581024ASP
Leaded SIP: AK581024AGP
A7
Vcc