Accutek
Microcircuit
Corporation
AK584096AS / AK584096AG
4,194,304 x 8 Bit CMOS
Dynamic Random Access Memory
DESCRIPTION
Front View
30-Pin SIM
The Accutek AK584096 high density memory module is CMOS
DRAM organized in 4 Meg x 8 bit words. The assembly consists of
eight standard 4 Meg x 1 DRAMs in plastic SOJ packages mounted
on the front side of a printed circuit board. The module can be con-
figured as a leadless 30 pad SIM or a leaded 30 pin SIP. The mod-
ule is only 0.800 inch high (same height as a standard 1 Meg
module) making it ideally suited for applications with low height
restrictions.
1
30
30-Pin SIP
The operation of the AK584096 is identical to eight 4 Meg x 1
DRAMs. The data input is tied to the data output and brought out
separately for each device, with common RAS, CAS and WE con-
trol. This common I/O feature dictates the use of early-write cycles
to prevent contention of D and Q. Since the Write-Enable (WE) sig-
nal must always go low before CAS in a write cycle, Read-Write and
Read-Modify-Write operation is not possible.
1
· Operating free air temperature 00C to 700C
· Upward compatible with AK5816384
FEATURES
· 4,194,304 x 8 bit organization
· Optional 30 Pad leadless SIM (Single In-Line Module) or 30
Pin leaded SIP (Single In-Line Package)
· Downward compatible with AK58256 and AK581024
· JEDEC standard pinout
· Each device has common D and Q lines with common RAS,
CAS and WE control
· CAS-before-RAS refresh
· Power
4.40 Watt Max Active (80 nSEC)
3.75 Watt Max Active (100 nSEC)
44 mW Max Standby
PIN NOMENCLATURE
PIN ASSIGNMENT
FUNCTIONAL DIAGRAM
PIN #
1
SYMBOL
Vcc
CAS
DQ1
A0
PIN #
SYMBOL
DQ5
A8
DQ1 - DQ8
A0 - A10
CAS
Data In / Data Out
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Address Inputs
Column Address Strobe
Row Address Strobe
Write Enable
2
3
A9
4
A10
DQ6
WE
Vss
DQ7
NC
RAS
5
A1
WE
6
DQ2
A2
7
Vcc
5v Supply
8
A3
Vss
Ground
9
Vss
DQ3
A4
NC
No Connect
10
11
12
13
14
15
DQ8
NC
A5
RAS
NC
MODULE OPTIONS
DQ4
A6
NC
Leadless SIM: AK584096AS
Leaded SIP: AK584096AG
A7
Vcc