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AB28F200BR-T80 PDF预览

AB28F200BR-T80

更新时间: 2024-01-28 14:19:57
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
36页 438K
描述
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

AB28F200BR-T80 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:0.525 X 1.110 INCH, PLASTIC, SOP-44
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.69Is Samacsys:N
最长访问时间:80 ns其他特性:USER CONFIGURABLE 5V OR 12V VPP; DEEP POWER DOWN; TOP BOOT BLOCK; HARDWARE WRITE PROTECT
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:28.2 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:256KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP44,.63封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:2.95 mm
部门规模:16K,8K,96K,128K最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.07 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:MOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
切换位:NO类型:NOR TYPE
宽度:13.3 mmBase Number Matches:1

AB28F200BR-T80 数据手册

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The A28F200BR-T/B may contain design defects or errors known as errata which may cause the product to deviate from  
published specifications. Current characterized errata are available upon request.  
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.  
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