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AB28F800B5T90

更新时间： 2024-11-18 12:52:03
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
44页 344K
描述
5 VOLT BOOT BLOCK FLASH MEMORY

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中文翻译

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AB28F800B5T90 技术参数

生命周期：Transferred零件包装代码：SOIC
包装说明：0.525 X 1.110 INCH, PLASTIC, SOP-44针数：44
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.35
Is Samacsys：N最长访问时间：90 ns
其他特性：MINIMUM 100K EXTENDED BLOCK ERASE CYCLES; CAN ALSO BE CONFIGURABLE AS 512KX16; TOP BOOT BLOCK启动块：TOP
JESD-30 代码：R-PDSO-G44长度：28.2 mm
内存密度：8388608 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：44字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-40 °C
组织：1MX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：PARALLEL
编程电压：5 V认证状态：Not Qualified
座面最大高度：2.95 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
类型：NOR TYPE宽度：13.3 mm
Base Number Matches：1

AB28F800B5T90 数据手册

 浏览型号AB28F800B5T90的Datasheet PDF文件第2页浏览型号AB28F800B5T90的Datasheet PDF文件第3页浏览型号AB28F800B5T90的Datasheet PDF文件第4页浏览型号AB28F800B5T90的Datasheet PDF文件第5页浏览型号AB28F800B5T90的Datasheet PDF文件第6页浏览型号AB28F800B5T90的Datasheet PDF文件第7页 
PRELIMINARY  
E
5 VOLT BOOT BLOCK  
FLASH MEMORY  
28F200B5, 28F004/400B5, 28F800B5 (x8/x16)  
SmartVoltage Technology  
Extended Block Erase Cycling  
5 Volt Boot Block Flash:  
5 V Reads, 5 V or 12 V Writes  
Increased Programming Throughput  
at 12 V VPP  
100,000 Cycles at Commercial Temp  
10,000 Cycles at Extended Temp  
30,000 Cycles for Parameter Blocks  
and 1,000 Cycles for Main Blocks at  
Automotive Temperature  
Very High-Performance Read  
2-, 4-Mbit: 55 ns Access Time  
8-Mbit: 70 ns Access Time  
Hardware Data Protection Feature  
Absolute Hardware-Protection for  
Boot Block  
x8 or x8/x16-Configurable Data Bus  
Write Lockout during Power  
Transitions  
Low Power Consumption  
Max 60 mA Read Current at 5 V  
Auto Power Savings: <1 mA Typical  
Standby Current  
Automated Word/Byte Program and  
Block Erase  
Command User Interface  
Status Registers  
Erase Suspend Capability  
Optimized Array Blocking Architecture  
16-KB Protected Boot Block  
Two 8-KB Parameter Blocks  
96-KB and 128-KB Main Blocks  
Top or Bottom Boot Locations  
SRAM-Compatible Write Interface  
Reset/Deep Power-Down Input  
Provides Low-Power Mode and  
Reset for Boot Operations  
Extended Temperature Operation  
–40 °C to +85 °C  
Pinout Compatible 2, 4, and 8 Mbit  
Industry-Standard Packaging  
40, 48-Lead TSOP, 44-Lead PSOP  
ETOX™ Flash Technology  
0.6 µ ETOX IV Initial Production  
0.4 µ ETOX V Later Production  
The Intel® 5 Volt Boot Block Flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-  
density, low-cost, nonvolatile, read/write storage solutions for wide range of applications. Their  
a
asymmetrically-blocked architecture, flexible voltage, and extended cycling provide highly flexible  
components suitable for embedded code execution applications, such as networking infrastructure and office  
automation.  
Based on Intel® Boot Block architecture, the 5 Volt Boot Block Flash memory family enables quick and easy  
upgrades for designs that demand state-of-the-art technology. This family of products comes in industry-  
standard packages: the 40-lead TSOP for very space-constrained 8-bit applications, 48-lead TSOP, ideal for  
board-constrained higher-performance 16-bit applications, and the rugged, easy to handle 44-lead PSOP.  
NOTE: This document formerly known as Smart 5 Boot Block Flash Memory Family 2, 4, 8 Mbit.  
June 1999  
Order Number: 290599-007  
1234567...44

中文翻译

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