是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SC-63 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 5.65 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 10 A | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e6 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 20 W | 最大脉冲漏极电流 (IDM): | 40 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 20 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ388(L) | RENESAS |
获取价格 |
0.2ohm, POWER, FET, DPAK-3 | |
2SJ388(S) | RENESAS |
获取价格 |
0.2ohm, POWER, FET, DPAK-3 | |
2SJ388(S)TL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 30V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ388(S)TR | HITACHI |
获取价格 |
7A, 30V, 0.16ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ388L | ETC |
获取价格 |
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2SJ388S | ETC |
获取价格 |
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2SJ389 | HITACHI-METALS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ389(L) | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA | |
2SJ389(S) | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252AA | |
2SJ389(S)TL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal |