是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | HVBCC, | Reach Compliance Code: | compliant |
Factory Lead Time: | 13 weeks | 风险等级: | 1.77 |
系列: | AUP/ULP/V | JESD-30 代码: | R-PBCC-B8 |
长度: | 1.35 mm | 逻辑集成电路类型: | NAND GATE |
功能数量: | 2 | 输入次数: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | HVBCC | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
传播延迟(tpd): | 24.9 ns | 座面最大高度: | 0.35 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 0.8 V |
标称供电电压 (Vsup): | 1.1 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子形式: | BUTT | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 0.8 mm |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
74AUP2G00GM,125 | NXP | 74AUP2G00 - Low-power dual 2-input NAND gate QFN 8-Pin |
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|
74AUP2G00GN | NEXPERIA | Low-power dual 2-input NAND gateProduction |
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|
74AUP2G00GS | NEXPERIA | Low-power dual 2-input NAND gateProduction |
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|
74AUP2G00GT | NXP | Low-power dual 2-input NAND gate |
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|
74AUP2G00GT | NEXPERIA | Low-power dual 2-input NAND gateProduction |
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|
74AUP2G00GX | NEXPERIA | Low-power dual 2-input NAND gateProduction |
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