是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | DPAK-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 16 weeks |
风险等级: | 7.01 | 其他特性: | ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas): | 170 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 99 A | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.0083 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 143 W |
最大脉冲漏极电流 (IDM): | 396 A | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AUIRLR3636TRR | INFINEON | Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me |
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AUIRLR3705Z | INFINEON | Logic Level Advanced Process Technology |
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AUIRLR3705ZTR | INFINEON | Logic Level Advanced Process Technology |
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AUIRLR3705ZTRL | INFINEON | Logic Level Advanced Process Technology |
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AUIRLR3705ZTRR | INFINEON | Logic Level Advanced Process Technology |
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AUIRLR3915 | INFINEON | AUIRLR3915 HEXFET® Power MOSFET |
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