Datasheet > 935320919118

935320919118

更新时间： 2024-09-20 19:48:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
10页	339K
描述
RF Power Field-Effect Transistor

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935320919118 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.64
Base Number Matches：	1

935320919118 数据手册

Document Number: A2G35S200--01S

Rev. 0, 5/2016

Freescale Semiconductor

Technical Data

RF Power GaN Transistor

This 40 W RF power GaN transistor is designed for cellular base station

applications requiring very wide instantaneous bandwidth covering the

frequency range of 3400 to 3600 MHz.

A2G35S200--01SR3

This part is characterized and performance is guaranteed for applications

operating in the 3400 to 3600 MHz band. There is no guarantee of performance

when this part is used in applications designed outside of these frequencies.

3400–3600 MHz, 40 W AVG., 48 V

AIRFAST RF POWER GaN

TRANSISTOR

3500 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

_DQ= 291 mA, P_out= 40 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

3400 MHz

3500 MHz

3600 MHz

(dB)

14.7

16.1

(%)

32.4

35.3

36.7

7.2

7.0

6.6

–34.9

–34.7

–32.8

–10

–19

–9

NI--400S--2S

Features



High Terminal Impedances for Optimal Broadband Performance

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

RF /V

in GS

RF /V

out DS

(Top View)

Figure 1. Pin Connections

A2G35S200--01SR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...10

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