Datasheet > 934063384112

934063384112

更新时间： 2024-11-11 19:44:23

品牌	Logo	应用领域
恩智浦 - NXP		局域网放大器晶体管
页数	文件大小	规格书
13页	119K
描述
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2

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技术参数
数据手册

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934063384112 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	75 V
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	L BAND
JESD-30 代码：	R-CDFM-F2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

934063384112 数据手册

BLA1011-200R; BLA1011S-200R

Avionics LDMOS transistors

Rev. 01 — 23 February 2010

Product data sheet

1. Product profile

1.1 General description

200 W LDMOS avionics power transistor for transmitter applications at frequencies from

1030 MHz to 1090 MHz.

Table 1.

Typical performance

RF performance at T_h= 25 °C in a common source class-AB test circuit; I_Dq= 150 mA;

typical values.

Mode of operation

Conditions

V_DS

(V)

P_L

(W)

G_p

(dB) (%)

η_D

t_r

(ns)

t_f

(ns)

Pulsed class-AB:

1030 MHz to 1090 MHz

t_p= 50 μs; δ = 2 %

t_p= 128 μs; δ = 2 %

t_p= 340 μs; δ = 1 %

200

250

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz,

a supply voltage of 36 V and an I_Dqof 150 mA:

Load power ≥ 200 W

Gain ≥ 13 dB

Efficiency ≥ 45 %

Rise time ≤ 50 ns

Fall time ≤ 50 ns

High power gain

Easy power control

Excellent ruggedness

Source on mounting flange eliminates DC isolators, reducing common mode

inductance

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

12 3 4 5 6 7...13

中文翻译

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