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934055994127

更新时间: 2024-09-16 04:04:31
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恩智浦 - NXP 局域网三端双向交流开关
页数 文件大小 规格书
6页 47K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, PLASTIC, SC-46, 3 PIN

934055994127 数据手册

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Philips Semiconductors  
Product specification  
Three quadrant triacs  
guaranteed commutation  
BTA208 series D, E and F  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated guaranteed commutation  
triacs in a plastic envelope intended for  
use in motor control circuits or with other  
highly inductive loads. These devices  
balance the requirements of commutation  
performance and gate sensitivity. The  
"sensitive gate" E series and "logic level"  
D series are intended for interfacing with  
low power drivers, including micro  
controllers.  
SYMBOL  
PARAMETER  
MAX. MAX. UNIT  
BTA208- 600D  
-
BTA208- 600E 800E  
BTA208- 600F  
800F  
800  
VDRM  
Repetitive peak  
off-state voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
600  
V
IT(RMS)  
ITSM  
8
65  
8
65  
A
A
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
tab  
T2  
T1  
2
main terminal 2  
gate  
3
G
1 2 3  
tab main terminal 2  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
6001  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
8
A
Tmb 102 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
65  
72  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate power  
Average gate power  
t = 10 ms  
21  
A2s  
A/µs  
dIT/dt  
ITM = 12 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
PGM  
PG(AV)  
-
-
-
2
5
0.5  
A
W
W
over any 20 ms  
period  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
March 2002  
1
Rev 2.000  

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