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934056026127 PDF预览

934056026127

更新时间: 2024-11-06 20:05:19
品牌 Logo 应用领域
恩智浦 - NXP 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 91K
描述
37A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN

934056026127 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC, SC-46, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.19雪崩能效等级(Eas):31 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):37 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):149 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934056026127 数据手册

 浏览型号934056026127的Datasheet PDF文件第2页浏览型号934056026127的Datasheet PDF文件第3页浏览型号934056026127的Datasheet PDF文件第4页浏览型号934056026127的Datasheet PDF文件第5页浏览型号934056026127的Datasheet PDF文件第6页浏览型号934056026127的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Standard level FET  
BUK7540-100A  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
Standard level field-effect power  
transistor in a plastic envelope using  
trench’ technology which features  
very low on-state resistance. It is  
intended for use in automotive and  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
100  
37  
138  
175  
40  
V
A
W
˚C  
m  
general  
purpose  
switching  
RDS(ON)  
applications.  
resistance  
VGS = 5 V  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
s
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
ID  
IDM  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
-
-
-
-
-
-
-
-
100  
100  
20  
37  
26  
149  
138  
175  
V
V
V
A
A
A
W
˚C  
RGS = 20 kΩ  
-
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage & operating temperature  
Ptot  
Tstg, Tj  
- 55  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Thermal resistance junction to  
mounting base  
-
-
1.1  
K/W  
Rth j-a  
Thermal resistance junction to  
ambient  
in free air  
60  
-
K/W  
December 1999  
1
Rev 1.000  

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