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934043650115

更新时间: 2024-11-16 20:54:27
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲光电二极管晶体管
页数 文件大小 规格书
13页 351K
描述
10A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN

934043650115 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-73
包装说明:PLASTIC, SMD, SC-73, 4 PIN针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.21其他特性:LOGIC LEVEL COMPATIBLE
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):10 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934043650115 数据手册

 浏览型号934043650115的Datasheet PDF文件第2页浏览型号934043650115的Datasheet PDF文件第3页浏览型号934043650115的Datasheet PDF文件第4页浏览型号934043650115的Datasheet PDF文件第5页浏览型号934043650115的Datasheet PDF文件第6页浏览型号934043650115的Datasheet PDF文件第7页 
BSP030  
N-channel enhancement mode field-effect transistor  
Rev. 04 — 26 July 2000  
Product specification  
1. Description  
N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS™1 technology.  
Product availability:  
BSP030 in SOT223.  
2. Features  
TrenchMOS™ technology  
Fast switching  
Low on-state resistance  
Logic level compatible  
Surface mount package.  
3. Applications  
Motor and actuator driver  
Battery management  
c
c
High speed, low resistance switch.  
4. Pinning information  
Table 1: Pinning - SOT223, simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
d
4
2
drain (d)  
3
source (s)  
drain (d)  
g
4
03ab45  
03ab30  
1
2
3
s
SOT223  
N-channel MOSFET  
1. TrenchMOS is a trademark of Royal Philips Electronics.  

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