是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | E-LALF-W2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.92 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | E-LALF-W2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
最大输出电流: | 0.575 A | 封装主体材料: | GLASS |
封装形状: | ELLIPTICAL | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
参考标准: | IEC-134 | 最大重复峰值反向电压: | 5000 V |
最大反向恢复时间: | 0.35 µs | 表面贴装: | NO |
技术: | AVALANCHE | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
934045090153 | NXP |
获取价格 |
DIODE 0.575 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signa | |
934045100153 | NXP |
获取价格 |
DIODE 0.48 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal | |
934045110153 | NXP |
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DIODE 0.34 A, 5000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, MSB026, 2 PIN, Signal | |
934045120133 | NXP |
获取价格 |
DIODE 1.1 A, 500 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier | |
934045160127 | NXP |
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TRANSISTOR 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purp | |
934045260118 | NXP |
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TRANSISTOR 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET | |
934045270118 | NXP |
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TRANSISTOR 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
934045290118 | NXP |
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TRANSISTOR 57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
934045300118 | NXP |
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TRANSISTOR 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
934045400115 | NXP |
获取价格 |
SILICON, UHF BAND, MIXER DIODE, PLASTIC, SMD, SC-76, 2 PIN |