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8550SS-C-AP-HF PDF预览

8550SS-C-AP-HF

更新时间: 2024-02-17 23:15:33
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 365K
描述
Small Signal Bipolar Transistor,

8550SS-C-AP-HF 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.61Base Number Matches:1

8550SS-C-AP-HF 数据手册

 浏览型号8550SS-C-AP-HF的Datasheet PDF文件第2页 
M C C  
8550SS-C  
8550SS-D  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
TO-92 Plastic-Encapsulate Transistors  
Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 1.5A  
PNP Silicon  
Transistors  
Collector-base Voltage 40V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking : 8550SS  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
TO-92  
A
E
B
C
Electrical Characteristics @ 25OC Unless EOtherwise Specified  
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
40  
25  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
C
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=40Vdc, I =0)  
E
ICEO  
Collector Cutoff Current  
(VCE=20Vdc, I =0)  
B
IEBO  
Emitter Cutoff Current  
(VEB=5.0Vdc, I =0)  
C
D
ON CHARACTERISTICS  
hFE(1)  
DC Current Gain  
85  
40  
---  
---  
300  
---  
---  
---  
(I =100mAdc, VCE=1.0Vdc)  
C
hFE(2)  
DC Current Gain  
(I =800mAdc, VCE=1.0Vdc)  
C
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
(I =800mAdc, I =80mAdc)  
0.5  
1.2  
Vdc  
Vdc  
C
B
G
Base-Emitter Saturation Voltage  
(I =800mAdc, I =80mAdc)  
C
B
DIMENSIONS  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
100  
---  
MHz  
(I =50mAdc, VCE=10Vdc, f=30MHz)  
C
E
G
CLASSIFICATION OF HFE (1)  
Rank  
C
D
Range  
120-200  
160-300  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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