WILLAS
8550SxLT1
SOT-23 Plastic-Encapsulate Transistors
SOT-23
TRANSISTOR (PNP)
FEATURES
z
Pb-Free package is available
1. BASE
RoHS product for packing code suffix ”G”
2. EMITTER
3. COLLECTOR
Halogen free product for packing code suffix “H”
z
z
Collector current: IC=0.5A
Moisture Sensitivity Level 1
MARKING : 2TY
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
-25
VCEO
VEBO
IC
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-0.5
0.3
A
PC
W
℃
℃
Tj
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC = -100μA, IE=0
IC =-1mA, IB=0
Min
-40
-25
-5
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
IE= -100μA, IC=0
VCB= -40V, IE=0
VCE= -20V, IB=0
VEB= -3V, IC=0
-0.1
-0.1
-0.1
400
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
hFE(1)
VCE= -1V, IC= -50mA
120
DC current gain
hFE(2)
VCE= -1V, IC= -500mA
IC=-500mA, IB= -50mA
IC=-500mA, IB= -50mA
50
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
-0.6
-1.2
V
V
VCE= -6V, IC= -20mA
f=30MHz
Transition frequency
150
MHz
fT
CLASSIFICATION OF hFE(1)
Rank
L
H
120-200
200-350
Range
2012-10
WILLAS ELECTRONIC CORP.