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8550SST PDF预览

8550SST

更新时间: 2024-01-18 19:43:11
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 345K
描述
PNP Plastic Encapsulated Transistor

8550SST 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.61Base Number Matches:1

8550SST 数据手册

 浏览型号8550SST的Datasheet PDF文件第2页 
8550SST  
-1.5A , -40V  
PNP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
TO-92  
FEATURES  
General Purpose Switching and Amplification.  
G
H
Emitter  
Collector  
Base  
J
CLASSIFICATION OF hFE (1)  
A
D
Millimeter  
Product-Rank  
8550SST-B  
8550SST-C  
120~200  
8550SST-D  
160~300  
REF.  
B
Min.  
4.40  
4.30  
12.70  
3.30  
0.36  
0.36  
Max.  
4.70  
4.70  
-
3.81  
0.56  
0.51  
A
B
C
D
E
F
G
H
J
Range  
85~160  
K
E
C
F
1.27 TYP.  
1.10  
2.42  
0.36  
-
2.66  
0.76  
K
Collector  
  
  
Base  
  
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Rating  
Unit  
Collector to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
-40  
-25  
-5  
V
V
Collector to Emitter Voltage  
Emitter to Base Voltage  
V
Collector Current - Continuous  
Collector Power Dissipation  
-1.5  
1
A
PC  
W
Thermal Resistance From Junction to Ambient  
Junction, Storage Temperature  
RθJA  
TJ, TSTG  
125  
°C / W  
°C  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Test condition  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-40  
-25  
-5  
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC= -0.1mA, IE=0  
-
IC= -0.1mA, IB=0  
-
V
IE= -0.1mA, IC=0  
-0.1  
-0.1  
-0.1  
300  
-
μA  
μA  
μA  
VCB= -40V, IE=0  
Collector Cut-Off Current  
ICEO  
-
VCE= -20V, IB=0  
Emitter Cut-Off Current  
IEBO  
-
VEB= -5V, IC=0  
hFE (1)  
hFE (2)  
VCE(sat)  
VBE(sat)  
fT  
85  
40  
-
VCE= -1V, IC= -100mA  
VCE= -1V, IC= -800mA  
IC= -800mA, IB= -80mA  
IC= -800mA, IB= -80mA  
DC Current Gain  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Transition Frequency  
-0.5  
-1.2  
-
V
V
-
100  
MHz VCE= -10V, IC= -50mA, f=30MHz  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
18-Feb-2011 Rev. B  
Page 1 of 2  

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