Datasheet > 8550S

8550S

更新时间： 2024-09-13 03:10:55

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管
页数	文件大小	规格书
1页	90K
描述
PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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8550S 数据手册

PNP TRANSISTOR

-0.5A

8550S

ꢀ Power Dissipation: 0.625W

ꢀ Collector Current: -0.5A

ꢀ Collector-Base Voltage: -45V

TO-92

（

℃）

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25

PARAMETERS

Collector-Emitter Breakdown Voltage BVceo -25

SYMBOL MIN TYP MAX UNIT

CONDITION

Ic=-0.1mA

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Leakage

BVcbo

-45

Ic=-100 A

BVebo -5

Icbo

Ie=-100 A

-0.1

-0.6

-1.2

300

Vcb=-40V

Vce=-20V

Collector-Emitter Leakage

Emitter-Base Leakage

Iceo

Iebo

Veb=-5V

Collector-Emitter Saturation Voltage

Base-Emiiter Saturation Voltage

DC Current Gain

)

Ic=-500mA, Ib=-50mA

Vce(sat

Vbe(sat)

Hfe1

Hfe2

Vce=-1V,Ic=-50mA

Vce=-1V,Ic=-500mA

Collector Current

-0.5

Peak Collector Current

Current Gain Bandwidth

Output Capacitance

Power Dissipation

Icp

f_T

-8 A(Pulse)

MHz

150

Vcb=-6V, Ic=-20mA

Cob

0.625

150

℃

Vcb=-20V,Ie=0,f=1MHz

Junction Temperature

Storage Temperature

Tstg

-55

150

Hfe1 Classification

Rank

Range

85-160

120-200

160-300

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

中文翻译

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