Datasheet > 8550SD3

8550SD3

更新时间： 2023-02-26 14:13:04

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Transistor

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8550SD3 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO-92

8550S TRANSISTOR (PNP)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURE

Excellent h_FElinearity

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-40

Unit

-25

-5

Collector Current -Continuous

Collector Dissipation

-500

625

℃

P_C

T_J

Junction Temperature

150

T_stg

Junction and Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-40

-25

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -100uA, I_E=0

I_C= -1mA, I_B=0

I_E= -100uA, I_C=0

V_CB= -40V, I_E=0

-0.1

400

Collector cut-off current

I_CEO

V_CE= -20V,I_B=0

Emitter cut-off current

I_EBO

V_EB= - 3V, I_C=0

h_FE(1)

V_CE= -1V, I_C= -50mA

V_CE= -1V, IC= -500mA

I_C=-500mA, I_B=-50mA

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

-0.6

-1.2

_CE=- 6V, I_C=-20mA

Transition frequency

f_T

150

MHz

f =30MHz

CLASSIFICATION OF hFE

(1)

300-400

Rank

Range

85-160

120-200

160-300

A,May,2011

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