生命周期: | Obsolete | 零件包装代码: | DFP |
包装说明: | DFP, | 针数: | 24 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.1 |
最长访问时间: | 55 ns | JESD-30 代码: | R-CDFP-F24 |
内存密度: | 16384 bit | 内存集成电路类型: | OTP ROM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 24 | 字数: | 2048 words |
字数代码: | 2000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 2KX8 | 输出特性: | 3-STATE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DFP |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
座面最大高度: | 2.286 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | BIPOLAR |
温度等级: | MILITARY | 端子形式: | FLAT |
端子节距: | 1.27 mm | 端子位置: | DUAL |
宽度: | 9.144 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
82S191A/BLA | NXP |
获取价格 |
IC 2K X 8 OTPROM, 55 ns, CDIP24, 0.300 INCH, CERAMIC, DIP-24, Programmable ROM | |
82S1B-R16-A07/A07L | BOURNS |
获取价格 |
Potentiometer, Cermet, 2W, 250ohm, 10% +/-Tol, -150,150ppm/Cel, 6363, | |
82S1B-R50-A09 | BOURNS |
获取价格 |
Potentiometer, Cermet, 2W, 750ohm, 10% +/-Tol, -150,150ppm/Cel, 6363, | |
82S1C-R19-A28/A28 | BOURNS |
获取价格 |
Potentiometer, Cermet, 2W, 150ohm, 10% +/-Tol, -150,150ppm/Cel, 6363, | |
82S1E-R19-S13 | BOURNS |
获取价格 |
Potentiometer, Conductive Plastic, 0.25W, 5000ohm, 10% +/-Tol, -1000,1000ppm/Cel, 6363, | |
82S1K-R22-G15 | BOURNS |
获取价格 |
Potentiometer, Conductive Plastic, 0.25W, 10000ohm, 20% +/-Tol, -1000,1000ppm/Cel, 6363, | |
82S212 | ETC |
获取价格 |
2304 BIT BIPOLAR RAM | |
82S212/BWA | PHILIPS |
获取价格 |
Standard SRAM, 256X9, TTL, CDIP22, | |
82S212/BWA | YAGEO |
获取价格 |
Cache SRAM, 256X9, 70ns, TTL, CDIP22 | |
82S212/BWA-40 | PHILIPS |
获取价格 |
Standard SRAM, 256X9, 70ns, TTL, CDIP22, |