Datasheet > 8050PLT1

8050PLT1

更新时间： 2024-11-24 01:25:23

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
7页	668K
描述
NPN General Purpose Transistor

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中文翻译

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数据手册

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8050PLT1 数据手册

8050PLT1

8050QLT1

NPN General Purpose Transistors

PRIMARY CHARACTERISTICS

SOT-23

PACKAGE

P_D

V_CEO

I_C

225mW

25V

Marking Code : 80P/1YC

Ex : 8050PLT1

800mA

100~300

150℃

COLLECTOR

h_FE

80P

T_J,Max

BASE

EMITTER

FEATURES

MECHANICAL DATA

Case：Molded plastic,SOT-23

Polarity：Shown above



High current capacity in compact

package.

IC = 0.8A.

Terminals :Plated terminals,



Epitaxial planar type.

Moisture Sensitivity Level 1

solderable per MIL-STD-750,Method

2026



Epoxy : UL94-V0 rated flame

retardant

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

V_CEO

V_CBO

V_EBO

Collector Current-continuoun

800

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

Rθ^{J A}

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

Rθ^{J A}

417

°C/W

°C

-55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2015.09

www.willas.com.tw

Rev.L02

12 3 4 5 6 7

中文翻译

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