Datasheet > 8050S

8050S

更新时间： 2024-11-19 08:06:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
1页	34K
描述
TRANSISTOR（ NPN ）

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中文翻译

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数据手册

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8050S 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

8050S TRANSISTOR（ NPN

）

TO— 92

FEATURES

Power dissipation

P_CM: 0.625 W（Tamb=25℃）

Collector current

I_CM: 0.5

1.EMITTER

2. COLLECTOR

3.BASE

Collector-base voltage

V_(BR)CBO: 40

1 2 3

Operating and storage junction temperature range

T_J，T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic= 100μA , I_E=0

Ic= 1 mA， I_B=0

I_E= 100μA， I_C=0

V_CB= 40 V , I_E=0

V_CE= 20 V , I_B=0

V_EB= 3 V， I_C=0

V_CE= 1 V, I_C= 50mA

V_CE= 1 V, I_C= 500mA

I_C=500mA, I_B=50 mA

0.1

300

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE（1）

DC current gain

h_FE（2）

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.6

1.2

I_C=500mA, I_B=50 mA

V_CE= 6 V, IC=20mA

Transition frequency

f_T

150

MHz

f =30MHz

CLASSIFICATION OF hFE

(1)

Rank

Range

85-160

120-200

160-300

中文翻译

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