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8050SE(TO-92) PDF预览

8050SE(TO-92)

更新时间: 2024-11-20 07:54:03
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Transistor

8050SE(TO-92) 数据手册

 浏览型号8050SE(TO-92)的Datasheet PDF文件第2页 
UTC 8050S  
NPN EPITAXIAL SILICON TRANSISTOR  
LOW VOLTAGE HIGH CURRENT  
SMALL SIGNAL NPN  
TRANSISTOR  
DESCRIPTION  
The UTC8050S is a low voltage high current small signal  
NPN transistor, designed for Class B push-pull audio  
amplifier and general purpose applications.  
1
FEATURES  
*Collector current up to 700mA  
*Collector-Emitter voltage up to 20 V  
*Complementary to UTC 8550S  
TO-92  
1: EMITTER 2: COLLECTOR 3: BASE  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified)  
PARAMETER  
Collector-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Pc  
VALUE  
UNIT  
V
V
V
W
30  
Collector-Emitter Voltage  
Emitter-Base Voltage  
20  
5
1
Collector Dissipation(Ta=25)  
Collector Current  
Junction Temperature  
Storage Temperature  
Ic  
Tj  
TSTG  
700  
150  
-65 ~ +150  
mA  
°C  
°C  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
Ic=100µA,IE=0  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
30  
20  
5
V
V
V
uA  
nA  
Ic=1mA,IB=0  
IE=100µA,Ic=0  
VCB=30V,IE=0  
VEB=5V,Ic=0  
1
Emitter Cut-Off Current  
IEBO  
100  
DC Current Gain(note)  
hFE1  
VCE=1V,Ic=1mA  
VCE=1V,Ic=150 mA  
VCE=1V,Ic=500mA  
Ic=500mA,IB=50mA  
Ic=500mA,IB=50mA  
VCE=1V,Ic=10mA  
VCE=10V,Ic=50mA  
VCB=10V,IE=0  
100  
120  
40  
hFE2  
hFE3  
VCE(sat)  
VBE(sat)  
VBE  
110  
9.0  
400  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
0.5  
1.2  
1.0  
V
V
V
MHz  
pF  
fT  
Cob  
100  
f=1MHz  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R201-011,A  

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