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8050S PDF预览

8050S

更新时间: 2024-11-19 06:32:39
品牌 Logo 应用领域
DAYA 晶体晶体管
页数 文件大小 规格书
2页 163K
描述
TO-92 Plastic-Encapsulate Transistors

8050S 数据手册

 浏览型号8050S的Datasheet PDF文件第2页 
TO-92 Plastic-Encapsulate Transistors  
TO-92  
8050S TRANSISTOR (NPN)  
FEATURES  
1.EMITTER  
2.COLLECTOR  
3.BASE  
z
Complimentary to 8550S  
z
Collector current: IC=0.5A  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Units  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
V
V
1 2 3  
25  
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
0.5  
A
PC  
0.625  
150  
W
TJ  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
40  
25  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 100μA, IE=0  
IC= 0.1mA, IB=0  
IE= 100μA, IC=0  
VCB= 40 V , IE=0  
VCE= 20 V , IB=0  
VEB= 5V, IC=0  
V
V
0.1  
0.1  
0.1  
400  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
Emitter cut-off current  
IEBO  
hFE(1)  
VCE= 1V, IC= 50mA  
VCE= 1V, IC= 500mA  
IC=500mA, IB=50mA  
IC=500mA, IB=50mA  
85  
50  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
0.6  
1.2  
V
V
VCE= 6V, IC=20mA  
f =30MHz  
Transition frequency  
fT  
150  
MHz  
CLASSIFICATION OF hFE(1)  
Rank  
B
C
D
D3  
300-400  
Range  
85-160  
120-200  
160-300  

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