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8050S

更新时间: 2024-11-23 03:10:23
品牌 Logo 应用领域
司坦森 - STANSON 晶体晶体管
页数 文件大小 规格书
1页 90K
描述
NPN TRANSISTOR

8050S 数据手册

  
NPN TRANSISTOR  
0.5A  
8050S  
Power Dissipation: 0.625W  
Collector Current: 0.5A  
Collector-Base Voltage:: 45V  
TO-92  
℃)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ta=25  
PARAMETERS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Leakage  
SYMBOL MIN TYP MAX UNIT  
BVceo 25  
CONDITION  
Ic=0.1mA  
V
BVcbo  
BVebo  
Icbo  
45  
V
V
u
Ic=100 A  
5
μ
Ie=100 A  
0.1  
0.1  
0.1  
0.6  
1.2  
300  
uA  
uA  
uA  
V
Vcb=40V  
Vce=20V  
Collector-Emitter Leakage  
Iceo  
Emitter-Base Leakage  
Iebo  
Veb=5V  
Collector-Emitter Saturation Voltage  
Base-Emiiter Saturation Voltage  
DC Current Gain  
Ic=500mA, Ib=50mA  
Ic=500mA, Ib=50mA  
Vce(sat  
Vbe(sat)  
V
Hfe1  
Hfe2  
Ic  
85  
50  
Vce=1V,Ic=50mA  
Vce=1V,Ic=500mA  
Collector Current  
0.5  
8
A
A(Pulse)  
MHz  
pF  
Peak Collector Current  
Current Gain Bandwidth  
Output Capacitance  
Power Dissipation  
Icp  
fT  
150  
Vcb=6V, Ic=20mA  
Cob  
Pc  
32  
0.625  
150  
Vcb=20V,Ie=0,f=1MHz  
W
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
-55  
150  
Hfe1 Classification  
Rank  
B
C
D
Range  
85-160  
120-200  
160-300  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
TEL: (650) 9389294 FAX: (650) 9389295  

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