WILLAS
8050SLT1
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
SOT-23
FEATURES
z
Pb-Free package is available
RoHS product for packing code suffix ”G”
1. BASE
Halogen free product for packing code suffix “H”
2. EMITTER
3. COLLECTOR
z
Collector Current: IC=0.5A
MARKING: J3Y
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
25
VCEO
VEBO
IC
V
5
V
Collector Current -Continuous
Collector Dissipation
0.5
A
PC
0.3
W
℃
℃
Tj
Junction Temperature
Storage Temperature
150
-55-150
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= 100μA, IE=0
Min
40
25
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=1mA, IB=0
V
V
IE=100μA, IC=0
VCB=40 V , IE=0
0.1
0.1
0.1
350
μA
μA
μA
Collector cut-off current
ICEO
VCB=20V , I E=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
HFE(1)
VCE=1V, I C= 50mA
VCE=1V, I C= 500mA
I=500 mA, IB= 50mA
IC=500 mA, IB= 50mA
120
50
DC current gain
HFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
0.6
1.2
V
V
V
CE=6V, I C= 20mA
Transition frequency
fT
150
MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
120-200
200-350
Range
2012-10
WILLAS ELECTRONIC CORP.