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8050SLT1 PDF预览

8050SLT1

更新时间: 2022-04-08 14:27:57
品牌 Logo 应用领域
威伦 - WILLAS 晶体晶体管
页数 文件大小 规格书
3页 484K
描述
SOT-23 Plastic-Encapsulate Transistors

8050SLT1 数据手册

 浏览型号8050SLT1的Datasheet PDF文件第2页浏览型号8050SLT1的Datasheet PDF文件第3页 
WILLAS  
8050SLT1  
SOT-23 Plastic-Encapsulate Transistors  
TRANSISTOR (NPN)  
SOT-23  
FEATURES  
z
Pb-Free package is available  
RoHS product for packing code suffix ”G”  
1. BASE  
Halogen free product for packing code suffix “H”  
2. EMITTER  
3. COLLECTOR  
z
Collector Current: IC=0.5A  
MARKING: J3Y  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
V
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
25  
VCEO  
VEBO  
IC  
V
5
V
Collector Current -Continuous  
Collector Dissipation  
0.5  
A
PC  
0.3  
W
Tj  
Junction Temperature  
Storage Temperature  
150  
-55-150  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC= 100μA, IE=0  
Min  
40  
25  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=1mA, IB=0  
V
V
IE=100μA, IC=0  
VCB=40 V , IE=0  
0.1  
0.1  
0.1  
350  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
VCB=20V , I E=0  
Emitter cut-off current  
IEBO  
VEB= 5V , IC=0  
HFE(1)  
VCE=1V, I C= 50mA  
VCE=1V, I C= 500mA  
I=500 mA, IB= 50mA  
IC=500 mA, IB= 50mA  
120  
50  
DC current gain  
HFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
0.6  
1.2  
V
V
V
CE=6V, I C= 20mA  
Transition frequency  
fT  
150  
MHz  
f=30MHz  
CLASSIFICATION OF hFE(1)  
Rank  
L
H
120-200  
200-350  
Range  
2012-10  
WILLAS ELECTRONIC CORP.  

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