JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050SS TRANSISTOR( NPN )
TO— 92
FEATURES
Power dissipation
1.EMITTER
2. COLLECTOR
3. BASE
PCM
Collector current
ICM: 1.5
:
1
W
(Tamb=25℃)
A
Collector-base voltage
V(BR)CBO : 40
1 2 3
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
Ic= 100 μA , IE=0
IC= 0.1 mA , IB=0
IE= 100 μA, IC=0
conditions
MIN
40
25
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
VCB= 40 V ,
VCE= 20 V ,
IE=0
IB=0
0.1
0.1
0.1
300
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
VEB= 5
V , IC=0
hFE(1)
VCE= 1 V , IC= 100 mA
VCE= 1 V , IC=800 mA
IC= 800 mA, IB= 80 mA
IC= 800mA, IB= 80 mA
85
40
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
0.5
1.2
V
V
VCE= 10 V, I = 50mA
C
Transition frequency
100
MHz
f
T
f =30 MHz
CLASSIFICATION OF hFE(1)
Rank
B
C
D
Range
85-160
120-200
160-300