Datasheet > 8050XLT1

8050XLT1

更新时间： 2022-05-19 10:34:24

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
4页	410K
描述
General Purpose Transistors

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8050XLT1 数据手册

WILLAS

8050xLT1

General Purpose Transistors

NPN Silicon

FEATURE

ƽHigh current capacity in compact package.

I_C= 0.8A.

ƽEpitaxial planar type.

ƽNPN complement: 8050

Pb-Free package is available

SOT–23

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

COLLECTOR

BASE

DEVICE MARKING AND ORDERING INFORMATION

EMITTER

Shipping

Device

Marking

3000/Tape&Reel

8050PLT1

80P

3000/Tape&Reel

8050QLT1

8050RLT1

1YC

1YE

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

V_CEO

V_CBO

V_EBO

Collector Current-continuoun

800

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

Rθ^{J A}

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

Rθ^{J A}

417

°C/W

°C

-55 to +150

2012-11

WILLAS ELECTRONIC CORP.

12 3 4

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