Datasheet > 8050XLT1

8050XLT1

更新时间： 2022-05-19 10:34:24

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
4页	410K
描述
General Purpose Transistors

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数据手册

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8050XLT1 数据手册

WILLAS

8050xLT1

General Purpose Transistors

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(I_C=1.0mA)

–

V_(BR)CEO

V_(BR)EBO

V_(BR)CBO

Emitter-Base Breakdown Voltage

(I_E=100µΑ)

Collector-Base Breakdown Voltage

(I_C=100µΑ)

Collector Cutoff Current (V_CB=35V)

Emitter Cutoff Current (V_EB=4V)

I_CBO

I_EBO

–

150

ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)

Charateristic

Symbol

Min

100

Typ

Max

Unit

DC Current Gain

I_C=100mA,V_CE=1V

h_FE

400

MHZ

Collector-Emitter Saturation Voltage

(I_C=800mA, I_B=80mA)

V_CE(sat)

0.5

NOTE :

h_FE

100~200

150~300

200-400

2012-11

WILLAS ELECTRONIC CORP.

123 4

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