PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
Absolute Maximum Ratings2
Notes:
Operating Temperature TA (ambient)
1. During transitions, inputs may undershoot to -2.0V or overshoot to VCC +2.0V for
periods less than 20ns.
Commercial
Industrial
0°C to +60 °C
2. Stress greater than those listed under “Absolute Maximum ratings” may cause
permanent damage to the device. This is a stress rating only and functional operation
at these or any other conditions greater than those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
-40°C to +85 °C**
Storage Temperature
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C**
-0.5V to VCC+0.5V (1)
-0.5V to +7.0V
Voltage on any pin relative to VSS
V
CC supply Voltage relative to VSS
DC CHARACTERISTICS (1)
Sym
Parameter
Density
Notes
Typ(4)
Max
Units
Test Conditions
(Mbytes)
ICCR
VCC Read Current
All
40(5)
75
mA
VCC = VCC MAX
tcycle = 150ns,CMOS levels
ICCW
ICCE
VCC Program Current
VCC Erase Current
VCC Standby Current
All
All
30(6)
30(6)
50
40(6)
40(6)
200
mA
mA
μA
ICCS
8MB
2,3
VCC = VCC MAX
(CMOS)
Control Signals = VCC
Reset = VSS, CMOS levels
64MB
100
400
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide operations.
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.
3. ICCS is specified for lowest density card (8MB for two, 32Mb components) This represents a single pair of devices.
4. Typical: VCC = 5V, T = +25°C.
5. The Icc current is typically less then 1mA/MHz per device, with with OE not active.
6. Icc active while Embedded Program or Erase algorithm is in progress. Value based on one device active.
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
ILI
Input Leakage Current
1
±20
μA
VCC = VCC MAX
VIN =VCC or VSS
ILO
Output Leakage Current
1
±20
μA
VCC = VCC MAX
VOUT =VCC or VSS
VIL
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1
1
1
1
1
0
0.8
VCC+0.5
0.4
V
V
V
V
V
VIH
0.7 VCC
VOL
VOH
VLKO
IOL = 3.2mA
IOH = -2.0mA
VCC-0.4
3.25
VCC
VCC Erase/Program
Lock Voltage
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND due to internal pull-up resistors.
Leakage currents on RST will be <150μA when VIN=VCC due to internal pull-down resistor.
August 2000
Rev. 4
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com