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7R8FLE222C15 PDF预览

7R8FLE222C15

更新时间: 2024-10-29 03:56:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 存储闪存
页数 文件大小 规格书
13页 238K
描述
Flash Card, 4MX16, 150ns, CARD-68

7R8FLE222C15 数据手册

 浏览型号7R8FLE222C15的Datasheet PDF文件第3页浏览型号7R8FLE222C15的Datasheet PDF文件第4页浏览型号7R8FLE222C15的Datasheet PDF文件第5页浏览型号7R8FLE222C15的Datasheet PDF文件第7页浏览型号7R8FLE222C15的Datasheet PDF文件第8页浏览型号7R8FLE222C15的Datasheet PDF文件第9页 
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
Absolute Maximum Ratings2  
Notes:  
Operating Temperature TA (ambient)  
1. During transitions, inputs may undershoot to -2.0V or overshoot to VCC +2.0V for  
periods less than 20ns.  
Commercial  
Industrial  
0°C to +60 °C  
2. Stress greater than those listed under “Absolute Maximum ratings” may cause  
permanent damage to the device. This is a stress rating only and functional operation  
at these or any other conditions greater than those indicated in the operational  
sections of this specication is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
-40°C to +85 °C**  
Storage Temperature  
Commercial  
0°C to +60 °C  
Industrial  
-40°C to +85 °C**  
-0.5V to VCC+0.5V (1)  
-0.5V to +7.0V  
Voltage on any pin relative to VSS  
V
CC supply Voltage relative to VSS  
DC CHARACTERISTICS (1)  
Sym  
Parameter  
Density  
Notes  
Typ(4)  
Max  
Units  
Test Conditions  
(Mbytes)  
ICCR  
VCC Read Current  
All  
40(5)  
75  
mA  
VCC = VCC MAX  
tcycle = 150ns,CMOS levels  
ICCW  
ICCE  
VCC Program Current  
VCC Erase Current  
VCC Standby Current  
All  
All  
30(6)  
30(6)  
50  
40(6)  
40(6)  
200  
mA  
mA  
μA  
ICCS  
8MB  
2,3  
VCC = VCC MAX  
(CMOS)  
Control Signals = VCC  
Reset = VSS, CMOS levels  
64MB  
100  
400  
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V  
Notes:  
1. All currents are RMS values unless otherwise specied. ICCR, ICCW and ICCE are based on Word wide operations.  
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.  
3. ICCS is specied for lowest density card (8MB for two, 32Mb components) This represents a single pair of devices.  
4. Typical: VCC = 5V, T = +25°C.  
5. The Icc current is typically less then 1mA/MHz per device, with with OE not active.  
6. Icc active while Embedded Program or Erase algorithm is in progress. Value based on one device active.  
Symbol  
Parameter  
Notes  
Min  
Max  
Units  
Test Conditions  
ILI  
Input Leakage Current  
1
±20  
μA  
VCC = VCC MAX  
VIN =VCC or VSS  
ILO  
Output Leakage Current  
1
±20  
μA  
VCC = VCC MAX  
VOUT =VCC or VSS  
VIL  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
1
1
1
1
1
0
0.8  
VCC+0.5  
0.4  
V
V
V
V
V
VIH  
0.7 VCC  
VOL  
VOH  
VLKO  
IOL = 3.2mA  
IOH = -2.0mA  
VCC-0.4  
3.25  
VCC  
VCC Erase/Program  
Lock Voltage  
Notes:  
1. Values are the same for byte and word wide modes for all card densities.  
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND due to internal pull-up resistors.  
Leakage currents on RST will be <150μA when VIN=VCC due to internal pull-down resistor.  
August 2000  
Rev. 4  
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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