Datasheet > 存储 > 闪存> 7R8FLE222C15

7R8FLE222C15

更新时间： 2024-10-29 03:56:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		存储闪存
页数	文件大小	规格书
13页	238K
描述
Flash Card, 4MX16, 150ns, CARD-68

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7R8FLE222C15 数据手册

PCMCIA Flash Memory Card

FLE Series

White Electronic Designs

CARD SIGNAL DESCRIPTION

Symbol

Type

Name and Function

A0 - A25

INPUT

ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not

used in word access mode. A25 is the most signiﬁcant bit

DQ0 - DQ15

CE1#, CE2#

INPUT/OUTPUT

INPUT

DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ15 is the MSB.

CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0,

CE1# and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.

OE#

INPUT

OUTPUT ENABLE: Active low signal gating read data from the memory card.

WRITE ENABLE: Active low signal gating write data to the memory card.

WE#

INPUT

RDY/BSY#

OUTPUT

READY/BUSY OUTPUT: Indicates status of internally timed erase or program algorithms. A high output indicates that

the card is ready to accept accesses. A low output indicates that one or more devices in the memory card are busy

with internally timed erase or write activities.

CD1#, CD2#

OUTPUT

CARD DETECT 1 and 2: Provide card insertion detection. These signals are connected to ground internally on the

memory card. The host socket interface circuitry shall supply 10K-ohm or larger pull-up resistors on these signal pins.

WRITE PROTECT: Write protect reﬂects the status of the Write Protect switch on the memory card. WP set to high

= write protected, providing internal hardware write lockout to the Flash array. If card does not include optional write

protect switch, this signal will be pulled low internally indicating write protect = “off”.

VPP1, VPP2

VCC

N.C.

PROGRAM/ERASE POWER SUPPLY: Not connected for 5V only card.

CARD POWER SUPPLY: 5.0V for all internal circuitry.

GROUND: for all internal circuitry.

GND

REG#

INPUT

ATTRIBUTE MEMORY SELECT: provides access to Flash memory card registers and Card Information Structure in

the Attribute Memory Plane.

RST

RESET: Active high signal for placing card in Power-on default state. Reset can be used as a Power-Down signal for

the memory array.

WAIT#

OUTPUT

WAIT: This signal is pulled high internally for compatibility. No wait states are generated.

BVD1, BVD2

VS1, VS2

BATTERY VOLTAGE DETECT: These signals are pulled high to maintain SRAM card compatibility.

VOLTAGE SENSE: Notiﬁes the host socket of the card’s VCC requirements. VS1 and VS2 are open to indicate a 5V

card has been inserted.

RFU

N.C.

RESERVED FOR FUTURE USE

NO INTERNAL CONNECTION TO CARD: pin may be driven or left ﬂoating

August 2000

Rev. 4

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

1 2 3 456 7 8...13

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与7R8FLE222C15相关器件

型号	品牌	获取价格	描述	数据表
7R8FLE222I15	MICROSEMI	获取价格	Flash Card, 4MX16, 150ns, CARD-68
7R8FLE230C15	MICROSEMI	获取价格	Flash Card, 4MX16, 150ns, CARD-68
7R8FLE230C25	MICROSEMI	获取价格	Flash Card, 4MX16, 150ns, CARD-68
7R8FLE230I25	MICROSEMI	获取价格	Flash Card, 4MX16, 150ns, CARD-68
7R8FLE231I15	MICROSEMI	获取价格	Flash Card, 4MX16, 150ns, CARD-68
7R8FLE231I25	MICROSEMI	获取价格	Flash Card, 4MX16, 150ns, CARD-68
7R8FLE232C15	MICROSEMI	获取价格	Flash Card, 4MX16, 150ns, CARD-68
7R8FLE232I15	MICROSEMI	获取价格	Flash Card, 4MX16, 150ns, CARD-68
7R8FLE232I25	MICROSEMI	获取价格	Flash Card, 4MX16, 150ns, CARD-68
7R8FLE240C15	MICROSEMI	获取价格	Flash Card, 4MX16, 150ns, CARD-68

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